Formation of an n-GaAs/n-GaAs regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma

Takaki Niwa, Naoki Furuhata, Tadashi Maeda

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report on the formation of a GaAs MBE regrowth interface without carrier depletion and contaminants using electron cyclotron resonance (ECR) hydrogen plasma. The mechanism for removing GaAs surface-contaminants such as Si, O, and C has been investigated to realize a contaminant-free regrowth-interface. Secondary ion mass spectroscopy (SIMS) analysis shows that Si and O contaminants result not only from adsorption when exposed to air prior to regrowth but also from the sputtering of the quartz liner in the ECR chamber during plasma treatment. These can be reduced to a level below the SIMS detection limit by lowering the hydrogen pressure to below 10-3 Torr, because sputtering can be suppressed. SIMS also reveals that the C contaminant can be removed at substrate temperatures above 400°C to a level below the SIMS detection limit. This was verified through thermal desorption spectroscopy (TDS) analysis. This is because the C contaminant is removed through transformation into CH3 at substrate temperatures above 400°C. Furthermore, reflection high-energy electron diffraction (RHEED) observation, atomic force microscopy (AFM) and capacitance-voltage (C-V) measurements indicate that both structural and electrical damage induced by ECR plasma is completely eliminated at 500°C. Based on these methods, we are able to produce an undamaged and contaminant-free MBE regrowth interface on n-GaAs/n-GaAs for the first time.

Original languageEnglish
Pages (from-to)441-446
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
Publication statusPublished - 1997 May
Externally publishedYes

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Electron cyclotron resonance
hydrogen plasma
electron cyclotron resonance
contaminants
Hydrogen
depletion
Impurities
Plasmas
mass spectroscopy
Spectroscopy
Ions
Molecular beam epitaxy
Sputtering
ions
sputtering
Thermal desorption spectroscopy
Reflection high energy electron diffraction
Quartz
Capacitance measurement
Voltage measurement

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Formation of an n-GaAs/n-GaAs regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma. / Niwa, Takaki; Furuhata, Naoki; Maeda, Tadashi.

In: Journal of Crystal Growth, Vol. 175-176, No. PART 1, 05.1997, p. 441-446.

Research output: Contribution to journalArticle

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