Abstract
The fabrication of arrays of iron nano-dots on cleaned Si substrates by electron beam induced deposition (EBID) using ultrahigh vacuum (UHV) transmission electron microscope (TEM) was investigated. The samples were Si(111) slices prepared as TEM specimens by mechanical dimpling followed by chemical etching, with an etchant HNO3. After fabrication and observation of dots, the room temperature (RT)-deposited substrates were annealed at 700K for 1 hour and were observed again. Results show that the spots from the dots form hexagonal with lattice spacing of 0.203±nm and they are rotated about 17.5 degrees from <200> Si.
| Original language | English |
|---|---|
| Title of host publication | Digest of Papers - Microprocesses and Nanotechnology 2004 |
| Pages | 60-61 |
| Number of pages | 2 |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | 2004 International Microprocesses and Nanotechnology Conference - Osaka Duration: 2004 Oct 26 → 2004 Oct 29 |
Other
| Other | 2004 International Microprocesses and Nanotechnology Conference |
|---|---|
| City | Osaka |
| Period | 04/10/26 → 04/10/29 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Formation of iron nano-dots by electron beam induced deposition using an ultrahigh vacuum transmission electron microscope. / Tanaka, M.; Chu, F.; Shimojo, Masayuki; Takeguchi, M.; Furuya, K.
Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 60-61.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Formation of iron nano-dots by electron beam induced deposition using an ultrahigh vacuum transmission electron microscope
AU - Tanaka, M.
AU - Chu, F.
AU - Shimojo, Masayuki
AU - Takeguchi, M.
AU - Furuya, K.
PY - 2004
Y1 - 2004
N2 - The fabrication of arrays of iron nano-dots on cleaned Si substrates by electron beam induced deposition (EBID) using ultrahigh vacuum (UHV) transmission electron microscope (TEM) was investigated. The samples were Si(111) slices prepared as TEM specimens by mechanical dimpling followed by chemical etching, with an etchant HNO3. After fabrication and observation of dots, the room temperature (RT)-deposited substrates were annealed at 700K for 1 hour and were observed again. Results show that the spots from the dots form hexagonal with lattice spacing of 0.203±nm and they are rotated about 17.5 degrees from <200> Si.
AB - The fabrication of arrays of iron nano-dots on cleaned Si substrates by electron beam induced deposition (EBID) using ultrahigh vacuum (UHV) transmission electron microscope (TEM) was investigated. The samples were Si(111) slices prepared as TEM specimens by mechanical dimpling followed by chemical etching, with an etchant HNO3. After fabrication and observation of dots, the room temperature (RT)-deposited substrates were annealed at 700K for 1 hour and were observed again. Results show that the spots from the dots form hexagonal with lattice spacing of 0.203±nm and they are rotated about 17.5 degrees from <200> Si.
UR - http://www.scopus.com/inward/record.url?scp=23344440289&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=23344440289&partnerID=8YFLogxK
M3 - Conference contribution
SN - 4990247205
SP - 60
EP - 61
BT - Digest of Papers - Microprocesses and Nanotechnology 2004
ER -