Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide

Tatsuya Okada, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Ryota Kashino, Takuto Ito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Scanning transmission electron microscopy was carried out to study the three-dimensional microstructures of periodic strained layers induced by the irradiation of femtosecond laser pulses inside a silicon carbide single crystal. The cross section of laser-irradiated line consisted of a shell-shaped modified region surrounding a core region with no modification. The laser-modified region was composed of strained layers with a typical spacing of 200 nm. Nanovoids from 10 nm to 20 nm in diameter were observed. Three-dimensional tomographic images clearly show the plate-like shape of strained layers extending parallel to the electric field of the laser light and the random distribution of nanovoids in the strained layers. The three-dimensional observation provides insight into the formation mechanisms of periodic microstructures.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages19-22
Number of pages4
Volume725
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki
Duration: 2011 Sep 252011 Sep 29

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)02555476

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
CityMiyazaki
Period11/9/2511/9/29

Fingerprint

Ultrashort pulses
Silicon carbide
silicon carbides
Single crystals
Lasers
single crystals
lasers
Microstructure
microstructure
statistical distributions
Electric fields
Irradiation
Transmission electron microscopy
Scanning electron microscopy
spacing
transmission electron microscopy
scanning electron microscopy
irradiation
electric fields
silicon carbide

Keywords

  • Femtosecond laser
  • Nanovoid
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Okada, T., Tomita, T., Matsuo, S., Hashimoto, S., Kashino, R., & Ito, T. (2012). Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide. In Materials Science Forum (Vol. 725, pp. 19-22). (Materials Science Forum; Vol. 725). https://doi.org/10.4028/www.scientific.net/MSF.725.19

Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide. / Okada, Tatsuya; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi; Kashino, Ryota; Ito, Takuto.

Materials Science Forum. Vol. 725 2012. p. 19-22 (Materials Science Forum; Vol. 725).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Okada, T, Tomita, T, Matsuo, S, Hashimoto, S, Kashino, R & Ito, T 2012, Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide. in Materials Science Forum. vol. 725, Materials Science Forum, vol. 725, pp. 19-22, 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14, Miyazaki, 11/9/25. https://doi.org/10.4028/www.scientific.net/MSF.725.19
Okada T, Tomita T, Matsuo S, Hashimoto S, Kashino R, Ito T. Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide. In Materials Science Forum. Vol. 725. 2012. p. 19-22. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.725.19
Okada, Tatsuya ; Tomita, Takuro ; Matsuo, Shigeki ; Hashimoto, Shuichi ; Kashino, Ryota ; Ito, Takuto. / Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide. Materials Science Forum. Vol. 725 2012. pp. 19-22 (Materials Science Forum).
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