Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device

Hiroshige Sugimoto, Yoshiharu Kariya, Ryuichiro Hanada, Akihisa Fukumoto, Yusaku Ito, Shinnosuke Soda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A mechanism of the vertical direction fracture in die attach was investigated. A crack occurred in the metallic compound/\beta -Sn interface by the stress in \beta -Sn dendrite boundary. By the growth of the crack, a cross-shaped damage occurred. The growth of the cross-shaped damage seemed to have caused a vertical direction fracture.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May 1
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

Fingerprint

Metallic compounds
Cracks
Direction compound
Power semiconductor devices

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Sugimoto, H., Kariya, Y., Hanada, R., Fukumoto, A., Ito, Y., & Soda, S. (2019). Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735334] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735334

Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device. / Sugimoto, Hiroshige; Kariya, Yoshiharu; Hanada, Ryuichiro; Fukumoto, Akihisa; Ito, Yusaku; Soda, Shinnosuke.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735334 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sugimoto, H, Kariya, Y, Hanada, R, Fukumoto, A, Ito, Y & Soda, S 2019, Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735334, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735334
Sugimoto H, Kariya Y, Hanada R, Fukumoto A, Ito Y, Soda S. Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735334. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735334
Sugimoto, Hiroshige ; Kariya, Yoshiharu ; Hanada, Ryuichiro ; Fukumoto, Akihisa ; Ito, Yusaku ; Soda, Shinnosuke. / Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).
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