Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device

Hiroshige Sugimoto, Yoshiharu Kariya, Ryuichiro Hanada, Akihisa Fukumoto, Yusaku Ito, Shinnosuke Soda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A mechanism of the vertical direction fracture in die attach was investigated. A crack occurred in the metallic compound/\beta -Sn interface by the stress in \beta -Sn dendrite boundary. By the growth of the crack, a cross-shaped damage occurred. The growth of the cross-shaped damage seemed to have caused a vertical direction fracture.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May 1
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

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ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Sugimoto, H., Kariya, Y., Hanada, R., Fukumoto, A., Ito, Y., & Soda, S. (2019). Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735334] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735334