Fully Planarized Multilevel Interconnection Using Selective SiO2 Deposition

T. Homma, T. Homma;T.Katoh;Y.Yamada;J.Shimizu;Y. Murao

Research output: Contribution to journalArticle

13 Citations (Scopus)
Original languageEnglish
Pages (from-to)315-322
JournalNEC Research & Development
Volume32
Publication statusPublished - 1991 Jul 1

Cite this

Fully Planarized Multilevel Interconnection Using Selective SiO2 Deposition. / Homma, T.; Murao, T. Homma;T.Katoh;Y.Yamada;J.Shimizu;Y.

In: NEC Research & Development, Vol. 32, 01.07.1991, p. 315-322.

Research output: Contribution to journalArticle

Homma, T. ; Murao, T. Homma;T.Katoh;Y.Yamada;J.Shimizu;Y. / Fully Planarized Multilevel Interconnection Using Selective SiO2 Deposition. In: NEC Research & Development. 1991 ; Vol. 32. pp. 315-322.
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