Fully planarized multilevel interconnection using selective SiO2 deposition

Tetsuya Homma; Takuya Katoh; Yoshiaki Yamada; Junzoh Shimizu; Yukinobu Murao

Fully planarized multilevel interconnection using selective SiO₂ deposition

Tetsuya Homma, Takuya Katoh, Yoshiaki Yamada, Junzoh Shimizu, Yukinobu Murao

Research output: Contribution to journal › Article

Abstract

A fully planarized mutilevel interconnection technology using both selective SiO₂ and tungsten deposition techniques has been developed. Selective SiO₂ deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H₂SiF₆) aqueous solution. LPD-SiO₂ film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO₂ film. Selectivity of LPD-SiO₂ deposition to on CVD-SiO₂ against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO₂ deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO₂ deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.

Original language	English
Pages (from-to)	315-322
Number of pages	8
Journal	NEC Research and Development
Volume	32
Issue number	3
Publication status	Published - 1991 Jul 1

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Homma, T., Katoh, T., Yamada, Y., Shimizu, J., & Murao, Y. (1991). Fully planarized multilevel interconnection using selective SiO₂ deposition. NEC Research and Development, 32(3), 315-322.

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title = "Fully planarized multilevel interconnection using selective SiO2 deposition",

abstract = "A fully planarized mutilevel interconnection technology using both selective SiO2 and tungsten deposition techniques has been developed. Selective SiO2 deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. LPD-SiO2 film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO2 film. Selectivity of LPD-SiO2 deposition to on CVD-SiO2 against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO2 deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO2 deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.",

author = "Tetsuya Homma and Takuya Katoh and Yoshiaki Yamada and Junzoh Shimizu and Yukinobu Murao",

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AU - Homma, Tetsuya

AU - Katoh, Takuya

AU - Yamada, Yoshiaki

AU - Shimizu, Junzoh

AU - Murao, Yukinobu

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N2 - A fully planarized mutilevel interconnection technology using both selective SiO2 and tungsten deposition techniques has been developed. Selective SiO2 deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. LPD-SiO2 film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO2 film. Selectivity of LPD-SiO2 deposition to on CVD-SiO2 against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO2 deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO2 deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.

AB - A fully planarized mutilevel interconnection technology using both selective SiO2 and tungsten deposition techniques has been developed. Selective SiO2 deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. LPD-SiO2 film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO2 film. Selectivity of LPD-SiO2 deposition to on CVD-SiO2 against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO2 deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO2 deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.

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