Fully planarized multilevel interconnection using selective SiO2 deposition

Tetsuya Homma, Takuya Katoh, Yoshiaki Yamada, Junzoh Shimizu, Yukinobu Murao

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13 Citations (Scopus)

Abstract

A fully planarized mutilevel interconnection technology using both selective SiO2 and tungsten deposition techniques has been developed. Selective SiO2 deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. LPD-SiO2 film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO2 film. Selectivity of LPD-SiO2 deposition to on CVD-SiO2 against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO2 deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO2 deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.

Original languageEnglish
Pages (from-to)315-322
Number of pages8
JournalNEC Research and Development
Volume32
Issue number3
Publication statusPublished - 1991 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Homma, T., Katoh, T., Yamada, Y., Shimizu, J., & Murao, Y. (1991). Fully planarized multilevel interconnection using selective SiO2 deposition. NEC Research and Development, 32(3), 315-322.