Abstract
A fully planarized mutilevel interconnection technology using both selective SiO2 and tungsten deposition techniques has been developed. Selective SiO2 deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. LPD-SiO2 film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO2 film. Selectivity of LPD-SiO2 deposition to on CVD-SiO2 against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO2 deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO2 deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.
| Original language | English |
|---|---|
| Pages (from-to) | 315-322 |
| Number of pages | 8 |
| Journal | NEC Research and Development |
| Volume | 32 |
| Issue number | 3 |
| Publication status | Published - 1991 Jul |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Fully planarized multilevel interconnection using selective SiO2 deposition. / Homma, Tetsuya; Katoh, Takuya; Yamada, Yoshiaki; Shimizu, Junzoh; Murao, Yukinobu.
In: NEC Research and Development, Vol. 32, No. 3, 07.1991, p. 315-322.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fully planarized multilevel interconnection using selective SiO2 deposition
AU - Homma, Tetsuya
AU - Katoh, Takuya
AU - Yamada, Yoshiaki
AU - Shimizu, Junzoh
AU - Murao, Yukinobu
PY - 1991/7
Y1 - 1991/7
N2 - A fully planarized mutilevel interconnection technology using both selective SiO2 and tungsten deposition techniques has been developed. Selective SiO2 deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. LPD-SiO2 film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO2 film. Selectivity of LPD-SiO2 deposition to on CVD-SiO2 against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO2 deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO2 deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.
AB - A fully planarized mutilevel interconnection technology using both selective SiO2 and tungsten deposition techniques has been developed. Selective SiO2 deposition is performed by Liquid Phase Deposition (LPD) using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. LPD-SiO2 film deposition and its properties have been investigated. It has become clear that the film properties for interlayer dielectrics are superior to those of CVD-SiO2 film. Selectivity of LPD-SiO2 deposition to on CVD-SiO2 against on photoresist patterns is good. This good selectivity is caused by wettability difference. Full planarization of interlayer using selective LPD-SiO2 deposition with a photoresist mask has been realized. Fully planarized two level tungsten interconnection using both LPD-SiO2 deposition and selective CVD via filling has been demonstrated. Via hole contact resistance was as low as 0.33 Ω at the diameter of 0.8 μm.
UR - http://www.scopus.com/inward/record.url?scp=0026189076&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026189076&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0026189076
VL - 32
SP - 315
EP - 322
JO - NEC Research and Development
JF - NEC Research and Development
SN - 0048-0436
IS - 3
ER -