Further EOT Scaling of Ge/HfO2 over Si/HfO2 MOS Systems

K. Kita, M. Sasagawa, K. Tomida, M. Toyama, K. Kyuno, A. Torium

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish
JournalInternational Workshop on Gate Insulator (IWGI2003)
Publication statusPublished - 2003 Nov 1

Cite this

Further EOT Scaling of Ge/HfO2 over Si/HfO2 MOS Systems. / Kita, K.; Sasagawa, M.; Tomida, K.; Toyama, M.; Kyuno, K.; Torium, A.

In: International Workshop on Gate Insulator (IWGI2003), 01.11.2003.

Research output: Contribution to journalArticle

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AU - Kita, K.

AU - Sasagawa, M.

AU - Tomida, K.

AU - Toyama, M.

AU - Kyuno, K.

AU - Torium, A.

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