Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

K. Kita; M. Sasagawa; K. Tomida; M. Tohyama; K. Kyuno; A. Toriumi

doi:10.1109/IWGI.2003.159209

Further EOT scaling of Ge/HfO₂ over Si/HfO₂ MOS systems

K. Kita, M. Sasagawa, K. Tomida, M. Tohyama, K. Kyuno, A. Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this paper, we describe a comprehensive comparision between Ge/HfO₂ and Si/HfO₂ system through physical and electrical properties.

Original language	English
Title of host publication	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	186-191
Number of pages	6
ISBN (Electronic)	4891140372, 9784891140373
DOIs	https://doi.org/10.1109/IWGI.2003.159209
Publication status	Published - 2003
Externally published	Yes
Event	International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan Duration: 2003 Nov 6 → 2003 Nov 7

Publication series

Name	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Other

Other	International Workshop on Gate Insulator, IWGI 2003
Country	Japan
City	Tokyo
Period	03/11/6 → 03/11/7

Keywords

Annealing
Argon
Chemical analysis
Hafnium oxide
Human computer interaction
Nose
Semiconductor films
Sputtering
Substrates
Thickness measurement

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/IWGI.2003.159209

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Cite this

Kita, K., Sasagawa, M., Tomida, K., Tohyama, M., Kyuno, K., & Toriumi, A. (2003). Further EOT scaling of Ge/HfO₂ over Si/HfO₂ MOS systems. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 186-191). [1252534] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159209

Further EOT scaling of Ge/HfO₂ over Si/HfO₂ MOS systems. / Kita, K.; Sasagawa, M.; Tomida, K.; Tohyama, M.; Kyuno, K.; Toriumi, A.

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 186-191 1252534 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kita, K, Sasagawa, M, Tomida, K, Tohyama, M, Kyuno, K & Toriumi, A 2003, Further EOT scaling of Ge/HfO₂ over Si/HfO₂ MOS systems. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003., 1252534, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003, Institute of Electrical and Electronics Engineers Inc., pp. 186-191, International Workshop on Gate Insulator, IWGI 2003, Tokyo, Japan, 03/11/6. https://doi.org/10.1109/IWGI.2003.159209

Kita K, Sasagawa M, Tomida K, Tohyama M, Kyuno K, Toriumi A. Further EOT scaling of Ge/HfO₂ over Si/HfO₂ MOS systems. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 186-191. 1252534. (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). https://doi.org/10.1109/IWGI.2003.159209

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keywords = "Annealing, Argon, Chemical analysis, Hafnium oxide, Human computer interaction, Nose, Semiconductor films, Sputtering, Substrates, Thickness measurement",

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