Abstract
In this paper, we describe a comprehensive comparision between Ge/HfO2 and Si/HfO2 system through physical and electrical properties.
| Original language | English |
|---|---|
| Title of host publication | Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 186-191 |
| Number of pages | 6 |
| ISBN (Print) | 4891140372, 9784891140373 |
| DOIs | |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan Duration: 2003 Nov 6 → 2003 Nov 7 |
Other
| Other | International Workshop on Gate Insulator, IWGI 2003 |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 03/11/6 → 03/11/7 |
Fingerprint
Keywords
- Annealing
- Argon
- Chemical analysis
- Hafnium oxide
- Human computer interaction
- Nose
- Semiconductor films
- Sputtering
- Substrates
- Thickness measurement
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems. / Kita, K.; Sasagawa, M.; Tomida, K.; Tohyama, M.; Kyuno, K.; Toriumi, A.
Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 186-191 1252534.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems
AU - Kita, K.
AU - Sasagawa, M.
AU - Tomida, K.
AU - Tohyama, M.
AU - Kyuno, K.
AU - Toriumi, A.
PY - 2003
Y1 - 2003
N2 - In this paper, we describe a comprehensive comparision between Ge/HfO2 and Si/HfO2 system through physical and electrical properties.
AB - In this paper, we describe a comprehensive comparision between Ge/HfO2 and Si/HfO2 system through physical and electrical properties.
KW - Annealing
KW - Argon
KW - Chemical analysis
KW - Hafnium oxide
KW - Human computer interaction
KW - Nose
KW - Semiconductor films
KW - Sputtering
KW - Substrates
KW - Thickness measurement
UR - http://www.scopus.com/inward/record.url?scp=84945117511&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84945117511&partnerID=8YFLogxK
U2 - 10.1109/IWGI.2003.159209
DO - 10.1109/IWGI.2003.159209
M3 - Conference contribution
SN - 4891140372
SN - 9784891140373
SP - 186
EP - 191
BT - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PB - Institute of Electrical and Electronics Engineers Inc.
ER -