Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

K. Kita, M. Sasagawa, K. Tomida, M. Tohyama, K. Kyuno, A. Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this paper, we describe a comprehensive comparision between Ge/HfO2 and Si/HfO2 system through physical and electrical properties.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages186-191
Number of pages6
ISBN (Print)4891140372, 9784891140373
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: 2003 Nov 6 → 2003 Nov 7

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period03/11/6 → 03/11/7

Keywords

  • Annealing
  • Argon
  • Chemical analysis
  • Hafnium oxide
  • Human computer interaction
  • Nose
  • Semiconductor films
  • Sputtering
  • Substrates
  • Thickness measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    • Cite this

    Kita, K., Sasagawa, M., Tomida, K., Tohyama, M., Kyuno, K., & Toriumi, A. (2003). Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 186-191). [1252534] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159209