GaAs buffering circuit ISI for ultra-fast data processing systems

T. Maeda, Y. Miyatake, Y. Tomonoh, S. Asai, M. Ishikawa, K. Nakaizumi, Y. Ohno, N. Ohno, T. Furutsuka

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

A GaAs buffering circuit LSI for ultra-fast data processing systems has been developed. The LSI with CML compatible interface and +1.5/-3.3-V power supply voltage has successfully achieved 2-ns data cycle time with 4.8-W chip power dissipation. The circuit was designed to accommodate the basic variations in FET parameters over the operating temperature range. Refractory metal gate lightly-doped drain (LDD) MESFET technology was employed. The gate length is 1.0 μm. WSi-W bilayer metallization system was used to reduce the gate resistance.

Original languageEnglish
Pages139-142
Number of pages4
Publication statusPublished - 1988 Dec 1

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Maeda, T., Miyatake, Y., Tomonoh, Y., Asai, S., Ishikawa, M., Nakaizumi, K., Ohno, Y., Ohno, N., & Furutsuka, T. (1988). GaAs buffering circuit ISI for ultra-fast data processing systems. 139-142.