GaAs multichip module for a parallel processing system

Takeshi Miyagi, Kenji Itoh, Susumu Kimijima, Toshio Sudo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The module described is a high-speed data transfer network for a parallel processing system. The high-speed data transfer network connecting multiple processor units was realized in a module using 8-b slice GaAs bus logic (BL) LSIs which operate at 100 MHz. The GaAs multichip module consists of 12 GaAs Bl LSIs in a 3 × 4 matrix. Each GaAs chip is sealed in a chip carrier with bumps. The chip carrier is flip-chip bonded to a copper/polyimide thin-film multilayer substrate. The characteristic impedance of the signal lines on the module is controlled to 75 Ω to be compatible with the GaAs original interface level. The thin film termination resistors are made of Ni/Cr in the substrate to prevent reflections. Heat generated from the module, which has a total of 90 W of power dissipation, is transferred through four heat pipes with fins by forced-air cooling at <2 m/s. A 3-Gb/s data transfer rate can be realized by four stacked modules of 38 GaAs BLs.

Original languageEnglish
Pages (from-to)828-832
Number of pages5
JournalIEEE transactions on components, hybrids, and manufacturing technology
Volume13
Issue number4
DOIs
Publication statusPublished - 1990 Dec

Fingerprint

Multichip modules
Data transfer
Parallel processing systems
Data transfer rates
Thin films
Fins (heat exchange)
Heat pipes
Substrates
Polyimides
Resistors
Energy dissipation
Multilayers
Cooling
Copper
Air
gallium arsenide
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

GaAs multichip module for a parallel processing system. / Miyagi, Takeshi; Itoh, Kenji; Kimijima, Susumu; Sudo, Toshio.

In: IEEE transactions on components, hybrids, and manufacturing technology, Vol. 13, No. 4, 12.1990, p. 828-832.

Research output: Contribution to journalArticle

Miyagi, Takeshi ; Itoh, Kenji ; Kimijima, Susumu ; Sudo, Toshio. / GaAs multichip module for a parallel processing system. In: IEEE transactions on components, hybrids, and manufacturing technology. 1990 ; Vol. 13, No. 4. pp. 828-832.
@article{f2d6a32f788b4bb9aafc800230850615,
title = "GaAs multichip module for a parallel processing system",
abstract = "The module described is a high-speed data transfer network for a parallel processing system. The high-speed data transfer network connecting multiple processor units was realized in a module using 8-b slice GaAs bus logic (BL) LSIs which operate at 100 MHz. The GaAs multichip module consists of 12 GaAs Bl LSIs in a 3 × 4 matrix. Each GaAs chip is sealed in a chip carrier with bumps. The chip carrier is flip-chip bonded to a copper/polyimide thin-film multilayer substrate. The characteristic impedance of the signal lines on the module is controlled to 75 Ω to be compatible with the GaAs original interface level. The thin film termination resistors are made of Ni/Cr in the substrate to prevent reflections. Heat generated from the module, which has a total of 90 W of power dissipation, is transferred through four heat pipes with fins by forced-air cooling at <2 m/s. A 3-Gb/s data transfer rate can be realized by four stacked modules of 38 GaAs BLs.",
author = "Takeshi Miyagi and Kenji Itoh and Susumu Kimijima and Toshio Sudo",
year = "1990",
month = "12",
doi = "10.1109/33.62526",
language = "English",
volume = "13",
pages = "828--832",
journal = "IEEE Transactions on Components, Hybrids and Manufacturing Technology",
issn = "0148-6411",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - GaAs multichip module for a parallel processing system

AU - Miyagi, Takeshi

AU - Itoh, Kenji

AU - Kimijima, Susumu

AU - Sudo, Toshio

PY - 1990/12

Y1 - 1990/12

N2 - The module described is a high-speed data transfer network for a parallel processing system. The high-speed data transfer network connecting multiple processor units was realized in a module using 8-b slice GaAs bus logic (BL) LSIs which operate at 100 MHz. The GaAs multichip module consists of 12 GaAs Bl LSIs in a 3 × 4 matrix. Each GaAs chip is sealed in a chip carrier with bumps. The chip carrier is flip-chip bonded to a copper/polyimide thin-film multilayer substrate. The characteristic impedance of the signal lines on the module is controlled to 75 Ω to be compatible with the GaAs original interface level. The thin film termination resistors are made of Ni/Cr in the substrate to prevent reflections. Heat generated from the module, which has a total of 90 W of power dissipation, is transferred through four heat pipes with fins by forced-air cooling at <2 m/s. A 3-Gb/s data transfer rate can be realized by four stacked modules of 38 GaAs BLs.

AB - The module described is a high-speed data transfer network for a parallel processing system. The high-speed data transfer network connecting multiple processor units was realized in a module using 8-b slice GaAs bus logic (BL) LSIs which operate at 100 MHz. The GaAs multichip module consists of 12 GaAs Bl LSIs in a 3 × 4 matrix. Each GaAs chip is sealed in a chip carrier with bumps. The chip carrier is flip-chip bonded to a copper/polyimide thin-film multilayer substrate. The characteristic impedance of the signal lines on the module is controlled to 75 Ω to be compatible with the GaAs original interface level. The thin film termination resistors are made of Ni/Cr in the substrate to prevent reflections. Heat generated from the module, which has a total of 90 W of power dissipation, is transferred through four heat pipes with fins by forced-air cooling at <2 m/s. A 3-Gb/s data transfer rate can be realized by four stacked modules of 38 GaAs BLs.

UR - http://www.scopus.com/inward/record.url?scp=0025557040&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025557040&partnerID=8YFLogxK

U2 - 10.1109/33.62526

DO - 10.1109/33.62526

M3 - Article

AN - SCOPUS:0025557040

VL - 13

SP - 828

EP - 832

JO - IEEE Transactions on Components, Hybrids and Manufacturing Technology

JF - IEEE Transactions on Components, Hybrids and Manufacturing Technology

SN - 0148-6411

IS - 4

ER -