GaAs Taper Etching By Mixture Gas Reactive Ion Etching System

Makoto Hirano

    Research output: Contribution to journal › Article

    Original languageEnglish
    Pages (from-to)L2136-L2138.
    JournalJapanese Journal of Applied Physics
    Volume30
    Publication statusPublished - 1991 Sep 1

    Cite this

    GaAs Taper Etching By Mixture Gas Reactive Ion Etching System. / Hirano, Makoto.

    In: Japanese Journal of Applied Physics, Vol. 30, 01.09.1991, p. L2136-L2138.

    Research output: Contribution to journal › Article

    Hirano, M 1991, 'GaAs Taper Etching By Mixture Gas Reactive Ion Etching System', Japanese Journal of Applied Physics, vol. 30, pp. L2136-L2138..
    Hirano M. GaAs Taper Etching By Mixture Gas Reactive Ion Etching System. Japanese Journal of Applied Physics. 1991 Sep 1;30:L2136-L2138.
    Hirano, Makoto. / GaAs Taper Etching By Mixture Gas Reactive Ion Etching System. In: Japanese Journal of Applied Physics. 1991 ; Vol. 30. pp. L2136-L2138.
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    title = "GaAs Taper Etching By Mixture Gas Reactive Ion Etching System",
    author = "Makoto Hirano",
    year = "1991",
    month = "9",
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    language = "English",
    volume = "30",
    pages = "L2136--L2138.",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
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    publisher = "Japan Society of Applied Physics",

    }

    TY - JOUR

    T1 - GaAs Taper Etching By Mixture Gas Reactive Ion Etching System

    AU - Hirano, Makoto

    PY - 1991/9/1

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    M3 - Article

    VL - 30

    SP - L2136-L2138.

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    ER -