Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology

B. Siddik Yarman, Retdian Nicodimus, Shigetaga Takagi, Nobuo Fujii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

Original languageEnglish
Title of host publicationEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
Pages264-267
Number of pages4
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007 - Seville, Spain
Duration: 2007 Aug 262007 Aug 30

Other

OtherEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
CountrySpain
CitySeville
Period07/8/2607/8/30

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ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Yarman, B. S., Nicodimus, R., Takagi, S., & Fujii, N. (2008). Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. In European Conference on Circuit Theory and Design 2007, ECCTD 2007 (pp. 264-267). [4529587] https://doi.org/10.1109/ECCTD.2007.4529587