Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology

B. Siddik Yarman, Nicodimus Retdian, Shigetaga Takagi, Nobuo Fujii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

Original languageEnglish
Title of host publicationEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
PublisherIEEE Computer Society
Pages264-267
Number of pages4
ISBN (Print)1424413427, 9781424413423
DOIs
Publication statusPublished - 2007 Jan 1
Externally publishedYes
EventEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007 - Seville, Spain
Duration: 2007 Aug 262007 Aug 30

Publication series

NameEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007

Other

OtherEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
CountrySpain
CitySeville
Period07/8/2607/8/30

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Yarman, B. S., Retdian, N., Takagi, S., & Fujii, N. (2007). Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. In European Conference on Circuit Theory and Design 2007, ECCTD 2007 (pp. 264-267). [4529587] (European Conference on Circuit Theory and Design 2007, ECCTD 2007). IEEE Computer Society. https://doi.org/10.1109/ECCTD.2007.4529587