Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology

B. Siddik Yarman, Nicodimus Retdian, Shigetaga Takagi, Nobuo Fujii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

Original languageEnglish
Title of host publicationEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
PublisherIEEE Computer Society
Pages264-267
Number of pages4
ISBN (Print)1424413427, 9781424413423
DOIs
Publication statusPublished - 2007 Jan 1
Externally publishedYes
EventEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007 - Seville, Spain
Duration: 2007 Aug 262007 Aug 30

Publication series

NameEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007

Other

OtherEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
Country/TerritorySpain
CitySeville
Period07/8/2607/8/30

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology'. Together they form a unique fingerprint.

Cite this