Abstract
In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
| Original language | English |
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| Title of host publication | ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings |
| Pages | 65-68 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
| Event | 2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007 - Iasi, Romania Duration: 2007 Jul 12 → 2007 Jul 13 |
Publication series
| Name | ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings |
|---|---|
| Volume | 1 |
Conference
| Conference | 2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007 |
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| Country | Romania |
| City | Iasi |
| Period | 07/7/12 → 07/7/13 |
ASJC Scopus subject areas
- Signal Processing
- Control and Systems Engineering
- Electrical and Electronic Engineering
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Yarman, B. S., Retdian, N., Takagi, S., & Fujii, N. (2007). Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. In ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings (pp. 65-68). [4292652] (ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings; Vol. 1). https://doi.org/10.1109/ISSCS.2007.4292652