Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz

B. Siddik Yarman, Nicodimus Retdian, Shigetaga Takagi, Nobuo Fujii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.

Original languageEnglish
Title of host publicationISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
Pages65-68
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007 - Iasi, Romania
Duration: 2007 Jul 122007 Jul 13

Publication series

NameISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
Volume1

Conference

Conference2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007
CountryRomania
CityIasi
Period07/7/1207/7/13

ASJC Scopus subject areas

  • Signal Processing
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Yarman, B. S., Retdian, N., Takagi, S., & Fujii, N. (2007). Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. In ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings (pp. 65-68). [4292652] (ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings; Vol. 1). https://doi.org/10.1109/ISSCS.2007.4292652