Abstract
In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
| Original language | English |
|---|---|
| Title of host publication | ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings |
| Pages | 65-68 |
| Number of pages | 4 |
| Volume | 1 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
| Event | 2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007 - Iasi Duration: 2007 Jul 12 → 2007 Jul 13 |
Other
| Other | 2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007 |
|---|---|
| City | Iasi |
| Period | 07/7/12 → 07/7/13 |
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ASJC Scopus subject areas
- Signal Processing
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. / Yarman, B. Siddik; Nicodimus, Retdian; Takagi, Shigetaga; Fujii, Nobuo.
ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings. Vol. 1 2007. p. 65-68 4292652.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz
AU - Yarman, B. Siddik
AU - Nicodimus, Retdian
AU - Takagi, Shigetaga
AU - Fujii, Nobuo
PY - 2007
Y1 - 2007
N2 - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
AB - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
UR - http://www.scopus.com/inward/record.url?scp=46449109467&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46449109467&partnerID=8YFLogxK
U2 - 10.1109/ISSCS.2007.4292652
DO - 10.1109/ISSCS.2007.4292652
M3 - Conference contribution
AN - SCOPUS:46449109467
SN - 1424409683
SN - 9781424409686
VL - 1
SP - 65
EP - 68
BT - ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
ER -