Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz

B. Siddik Yarman; Nicodimus Retdian; Shigetaga Takagi; Nobuo Fujii

doi:10.1109/ISSCS.2007.4292652

Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz

B. Siddik Yarman, Nicodimus Retdian, Shigetaga Takagi, Nobuo Fujii

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.

Original language	English
Title of host publication	ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
Pages	65-68
Number of pages	4
DOIs	https://doi.org/10.1109/ISSCS.2007.4292652
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007 - Iasi, Romania Duration: 2007 Jul 12 → 2007 Jul 13

Publication series

Name	ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
Volume	1

Conference

Conference	2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007
Country	Romania
City	Iasi
Period	07/7/12 → 07/7/13

ASJC Scopus subject areas

Signal Processing
Control and Systems Engineering
Electrical and Electronic Engineering

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10.1109/ISSCS.2007.4292652

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Yarman, B. S., Retdian, N., Takagi, S., & Fujii, N. (2007). Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. In ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings (pp. 65-68). [4292652] (ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings; Vol. 1). https://doi.org/10.1109/ISSCS.2007.4292652

Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. / Yarman, B. Siddik; Retdian, Nicodimus; Takagi, Shigetaga; Fujii, Nobuo.

ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings. 2007. p. 65-68 4292652 (ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yarman, BS, Retdian, N, Takagi, S & Fujii, N 2007, Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. in ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings., 4292652, ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings, vol. 1, pp. 65-68, 2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007, Iasi, Romania, 07/7/12. https://doi.org/10.1109/ISSCS.2007.4292652

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abstract = "In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.",

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AB - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.

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Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz

Abstract

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