Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz

B. Siddik Yarman, Retdian Nicodimus, Shigetaga Takagi, Nobuo Fujii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.

Original languageEnglish
Title of host publicationISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
Pages65-68
Number of pages4
Volume1
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007 - Iasi
Duration: 2007 Jul 122007 Jul 13

Other

Other2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007
CityIasi
Period07/7/1207/7/13

Fingerprint

Field effect transistors
Ultra-wideband (UWB)
Frequency bands
Communication systems
Transistors
Bandwidth
Processing

ASJC Scopus subject areas

  • Signal Processing
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Yarman, B. S., Nicodimus, R., Takagi, S., & Fujii, N. (2007). Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. In ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings (Vol. 1, pp. 65-68). [4292652] https://doi.org/10.1109/ISSCS.2007.4292652

Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. / Yarman, B. Siddik; Nicodimus, Retdian; Takagi, Shigetaga; Fujii, Nobuo.

ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings. Vol. 1 2007. p. 65-68 4292652.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yarman, BS, Nicodimus, R, Takagi, S & Fujii, N 2007, Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. in ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings. vol. 1, 4292652, pp. 65-68, 2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007, Iasi, 07/7/12. https://doi.org/10.1109/ISSCS.2007.4292652
Yarman BS, Nicodimus R, Takagi S, Fujii N. Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. In ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings. Vol. 1. 2007. p. 65-68. 4292652 https://doi.org/10.1109/ISSCS.2007.4292652
Yarman, B. Siddik ; Nicodimus, Retdian ; Takagi, Shigetaga ; Fujii, Nobuo. / Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz. ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings. Vol. 1 2007. pp. 65-68
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