TY - GEN
T1 - Gain-bandwidth properties of 0.18μm Si-CMOS transistor up to 10 GHz
AU - Yarman, B. Siddik
AU - Retdian, Nicodimus
AU - Takagi, Shigetaga
AU - Fujii, Nobuo
PY - 2007/12/1
Y1 - 2007/12/1
N2 - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
AB - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
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U2 - 10.1109/ISSCS.2007.4292652
DO - 10.1109/ISSCS.2007.4292652
M3 - Conference contribution
AN - SCOPUS:46449109467
SN - 1424409683
SN - 9781424409686
T3 - ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
SP - 65
EP - 68
BT - ISSCS 2007 - International Symposium on Signals, Circuits and Systems, Proceedings
T2 - 2007 International Symposium On Signals, Circuits and Systems, ISSCS 2007
Y2 - 12 July 2007 through 13 July 2007
ER -