GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

H. Ishikawa, T. Jimbo, T. Egawa

Research output: Contribution to journalConference article

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Abstract

We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

Original languageEnglish
Pages (from-to)2086-2088
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

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ASJC Scopus subject areas

  • Condensed Matter Physics

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