GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

H. Ishikawa, T. Jimbo, T. Egawa

Research output: Contribution to journalConference articlepeer-review

25 Citations (Scopus)


We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

Original languageEnglish
Pages (from-to)2086-2088
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
Publication statusPublished - 2008
Externally publishedYes
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sept 162007 Sept 21

ASJC Scopus subject areas

  • Condensed Matter Physics


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