GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Hiroyasu Ishikawa, T. Jimbo, T. Egawa

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

Original languageEnglish
Pages (from-to)2086-2088
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008
Externally publishedYes

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Bragg reflectors
light emitting diodes
retarding
output

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si. / Ishikawa, Hiroyasu; Jimbo, T.; Egawa, T.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 2008, p. 2086-2088.

Research output: Contribution to journalArticle

@article{c4d5d64addb74e498ae604fd52f4e72f,
title = "GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si",
abstract = "We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.",
author = "Hiroyasu Ishikawa and T. Jimbo and T. Egawa",
year = "2008",
doi = "10.1002/pssc.200778441",
language = "English",
volume = "5",
pages = "2086--2088",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "6",

}

TY - JOUR

T1 - GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

AU - Egawa, T.

PY - 2008

Y1 - 2008

N2 - We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

AB - We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

UR - http://www.scopus.com/inward/record.url?scp=77951222991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951222991&partnerID=8YFLogxK

U2 - 10.1002/pssc.200778441

DO - 10.1002/pssc.200778441

M3 - Article

VL - 5

SP - 2086

EP - 2088

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 6

ER -