GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

H. Ishikawa; T. Jimbo; T. Egawa

doi:10.1002/pssc.200778441

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

H. Ishikawa, T. Jimbo, T. Egawa

Research output: Contribution to journal › Conference article › peer-review

25 Citations (Scopus)

Abstract

We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (P_EL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The P_EL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

Original language	English
Pages (from-to)	2086-2088
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778441
Publication status	Published - 2008
Externally published	Yes
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sept 16 → 2007 Sept 21

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200778441

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title = "GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si",

abstract = "We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.",

author = "H. Ishikawa and T. Jimbo and T. Egawa",

year = "2008",

doi = "10.1002/pssc.200778441",

language = "English",

volume = "5",

pages = "2086--2088",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

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TY - JOUR

T1 - GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

AU - Ishikawa, H.

AU - Jimbo, T.

AU - Egawa, T.

PY - 2008

Y1 - 2008

N2 - We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

AB - We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

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DO - 10.1002/pssc.200778441

M3 - Conference article

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VL - 5

SP - 2086

EP - 2088

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Abstract

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