Abstract
We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.
| Original language | English |
|---|---|
| Pages (from-to) | L453-L455 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 43 |
| Issue number | 4 A |
| Publication status | Published - 2004 Apr 1 |
Keywords
- GaInNAs
- IML
- Semiconductor laser
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Kawaguchi, M., Miyamoto, T., Saitoh, A., & Koyama, F. (2004). GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers. Japanese Journal of Applied Physics, Part 2: Letters, 43(4 A), L453-L455.