Abstract
We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 43 |
| Issue number | 4 A |
| Publication status | Published - 2004 Apr 1 |
| Externally published | Yes |
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Keywords
- GaInNAs
- IML
- Semiconductor laser
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers. / Kawaguchi, Masao; Miyamoto, Tomoyuki; Saitoh, Atsushi; Koyama, Fumio.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 4 A, 01.04.2004.Research output: Contribution to journal › Article
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TY - JOUR
T1 - GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers
AU - Kawaguchi, Masao
AU - Miyamoto, Tomoyuki
AU - Saitoh, Atsushi
AU - Koyama, Fumio
PY - 2004/4/1
Y1 - 2004/4/1
N2 - We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.
AB - We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.
KW - GaInNAs
KW - IML
KW - Semiconductor laser
UR - http://www.scopus.com/inward/record.url?scp=2942627904&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2942627904&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:2942627904
VL - 43
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 A
ER -