GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers

Masao Kawaguchi, Tomoyuki Miyamoto, Atsushi Saitoh, Fumio Koyama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number4 A
Publication statusPublished - 2004 Apr 1
Externally publishedYes

Fingerprint

Quantum well lasers
quantum well lasers
Semiconductor quantum wells
lasing
Wavelength
Elongation
quantum wells
elongation
wavelengths
Photoluminescence
penalties
blue shift
Annealing
photoluminescence
annealing
thresholds

Keywords

  • GaInNAs
  • IML
  • Semiconductor laser

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers. / Kawaguchi, Masao; Miyamoto, Tomoyuki; Saitoh, Atsushi; Koyama, Fumio.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 4 A, 01.04.2004.

Research output: Contribution to journalArticle

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