Abstract
A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm2/Vs with a sheet carrier density of 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain-source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain-source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.
| Original language | English |
|---|---|
| Pages (from-to) | 459-466 |
| Number of pages | 8 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 4 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2001 Dec |
| Externally published | Yes |
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Keywords
- 2DEG
- AlGaN/GaN HEMT
- GaN MESFET
- GaN on Si
- InGaN LED
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
GaN-based optoelectronic devices on sapphire and Si substrates. / Umeno, Masayoshi; Egawa, Takashi; Ishikawa, Hiroyasu.
In: Materials Science in Semiconductor Processing, Vol. 4, No. 6, 12.2001, p. 459-466.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - GaN-based optoelectronic devices on sapphire and Si substrates
AU - Umeno, Masayoshi
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
PY - 2001/12
Y1 - 2001/12
N2 - A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm2/Vs with a sheet carrier density of 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain-source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain-source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.
AB - A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm2/Vs with a sheet carrier density of 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain-source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain-source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.
KW - 2DEG
KW - AlGaN/GaN HEMT
KW - GaN MESFET
KW - GaN on Si
KW - InGaN LED
UR - http://www.scopus.com/inward/record.url?scp=0035574859&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035574859&partnerID=8YFLogxK
U2 - 10.1016/S1369-8001(02)00003-3
DO - 10.1016/S1369-8001(02)00003-3
M3 - Article
AN - SCOPUS:0035574859
VL - 4
SP - 459
EP - 466
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 6
ER -