GaN-based optoelectronic devices on sapphire and Si substrates

Masayoshi Umeno, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm2/Vs with a sheet carrier density of 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain-source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain-source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.

Original languageEnglish
Pages (from-to)459-466
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume4
Issue number6
DOIs
Publication statusPublished - 2001 Dec
Externally publishedYes

Fingerprint

MESFET devices
Aluminum Oxide
optoelectronic devices
Sapphire
Optoelectronic devices
Light emitting diodes
sapphire
Transconductance
High electron mobility transistors
light emitting diodes
field effect transistors
transconductance
Substrates
high electron mobility transistors
Two dimensional electron gas
Metallorganic chemical vapor deposition
metals
Full width at half maximum
Semiconductor quantum wells
Carrier concentration

Keywords

  • 2DEG
  • AlGaN/GaN HEMT
  • GaN MESFET
  • GaN on Si
  • InGaN LED

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

GaN-based optoelectronic devices on sapphire and Si substrates. / Umeno, Masayoshi; Egawa, Takashi; Ishikawa, Hiroyasu.

In: Materials Science in Semiconductor Processing, Vol. 4, No. 6, 12.2001, p. 459-466.

Research output: Contribution to journalArticle

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AB - A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm2/Vs with a sheet carrier density of 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain-source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain-source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.

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