GaN-based optoelectronic devices on Si grown by MOCVD

Hiroyasu Ishikawa, Takashi Egawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsD.N. Buckley, P.C. Chang, P.D. Fox, W.K. Chan, K. Shiojima
Pages34-38
Number of pages5
Volume2
Publication statusPublished - 2004
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX
Duration: 2004 May 92004 May 14

Other

OtherState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CitySan Antonio, TX
Period04/5/904/5/14

Fingerprint

Metallorganic chemical vapor deposition
Optoelectronic devices
Light emitting diodes
High electron mobility transistors
Transconductance
Substrates
Sapphire
Multilayers
Electric potential
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ishikawa, H., & Egawa, T. (2004). GaN-based optoelectronic devices on Si grown by MOCVD. In D. N. Buckley, P. C. Chang, P. D. Fox, W. K. Chan, & K. Shiojima (Eds.), Proceedings - Electrochemical Society (Vol. 2, pp. 34-38)

GaN-based optoelectronic devices on Si grown by MOCVD. / Ishikawa, Hiroyasu; Egawa, Takashi.

Proceedings - Electrochemical Society. ed. / D.N. Buckley; P.C. Chang; P.D. Fox; W.K. Chan; K. Shiojima. Vol. 2 2004. p. 34-38.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ishikawa, H & Egawa, T 2004, GaN-based optoelectronic devices on Si grown by MOCVD. in DN Buckley, PC Chang, PD Fox, WK Chan & K Shiojima (eds), Proceedings - Electrochemical Society. vol. 2, pp. 34-38, State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, 04/5/9.
Ishikawa H, Egawa T. GaN-based optoelectronic devices on Si grown by MOCVD. In Buckley DN, Chang PC, Fox PD, Chan WK, Shiojima K, editors, Proceedings - Electrochemical Society. Vol. 2. 2004. p. 34-38
Ishikawa, Hiroyasu ; Egawa, Takashi. / GaN-based optoelectronic devices on Si grown by MOCVD. Proceedings - Electrochemical Society. editor / D.N. Buckley ; P.C. Chang ; P.D. Fox ; W.K. Chan ; K. Shiojima. Vol. 2 2004. pp. 34-38
@inproceedings{4b57d83f0a9845fba80c6c3d1071f8ee,
title = "GaN-based optoelectronic devices on Si grown by MOCVD",
abstract = "We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.",
author = "Hiroyasu Ishikawa and Takashi Egawa",
year = "2004",
language = "English",
volume = "2",
pages = "34--38",
editor = "D.N. Buckley and P.C. Chang and P.D. Fox and W.K. Chan and K. Shiojima",
booktitle = "Proceedings - Electrochemical Society",

}

TY - GEN

T1 - GaN-based optoelectronic devices on Si grown by MOCVD

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

PY - 2004

Y1 - 2004

N2 - We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.

AB - We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.

UR - http://www.scopus.com/inward/record.url?scp=5744237864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5744237864&partnerID=8YFLogxK

M3 - Conference contribution

VL - 2

SP - 34

EP - 38

BT - Proceedings - Electrochemical Society

A2 - Buckley, D.N.

A2 - Chang, P.C.

A2 - Fox, P.D.

A2 - Chan, W.K.

A2 - Shiojima, K.

ER -