GaN-based optoelectronic devices on Si grown by MOCVD

Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to conferencePaper

Abstract

We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.

Original languageEnglish
Pages34-38
Number of pages5
Publication statusPublished - 2004 Oct 28
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: 2004 May 92004 May 14

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period04/5/904/5/14

ASJC Scopus subject areas

  • Engineering(all)

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    Ishikawa, H., & Egawa, T. (2004). GaN-based optoelectronic devices on Si grown by MOCVD. 34-38. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.