GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor

M. Hao, Hiroyasu Ishikawa, B. Zhang, T. Egawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A novel process has been developed to grow GaN films and GaN-based light emitting diodes on the sapphire substrates with high-density nano-craters formed on the surface of the substartes in situ metalorganic vapor phase epitaxial (MOCVD) reactor. The whole process is a single and integrated MOCVD run. Firstly a thin GaN layer is grown on the sapphire substrate, and then it is etched away by only flowing the H 2 into the reactor at the higher temperature. It is found, amazingly, that the thermal decomposition of GaN can induce the chemical etching of sapphire, and result in the formation of high-density nano-craters on the surface of the substrates. Finally the device-quality GaN films could be grown on the etched sapphire substrate with the residual gallium droplets as nucleation sites. A preliminary result shows that the output power of GaN light-emitting diodes built on the in situ etched sapphire substrates could be increased by 30%.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2397-2400
Number of pages4
Volume1
Edition10
DOIs
Publication statusPublished - 2004
Externally publishedYes

Fingerprint

craters
sapphire
light emitting diodes
reactors
vapor phases
metalorganic chemical vapor deposition
thermal decomposition
gallium
etching
nucleation
output

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor. / Hao, M.; Ishikawa, Hiroyasu; Zhang, B.; Egawa, T.

Physica Status Solidi C: Conferences. Vol. 1 10. ed. 2004. p. 2397-2400.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

@inproceedings{f25ccaf7a2a7401bab9e0c038b9b5d1a,
title = "GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor",
abstract = "A novel process has been developed to grow GaN films and GaN-based light emitting diodes on the sapphire substrates with high-density nano-craters formed on the surface of the substartes in situ metalorganic vapor phase epitaxial (MOCVD) reactor. The whole process is a single and integrated MOCVD run. Firstly a thin GaN layer is grown on the sapphire substrate, and then it is etched away by only flowing the H 2 into the reactor at the higher temperature. It is found, amazingly, that the thermal decomposition of GaN can induce the chemical etching of sapphire, and result in the formation of high-density nano-craters on the surface of the substrates. Finally the device-quality GaN films could be grown on the etched sapphire substrate with the residual gallium droplets as nucleation sites. A preliminary result shows that the output power of GaN light-emitting diodes built on the in situ etched sapphire substrates could be increased by 30{\%}.",
author = "M. Hao and Hiroyasu Ishikawa and B. Zhang and T. Egawa",
year = "2004",
doi = "10.1002/pssc.200404982",
language = "English",
volume = "1",
pages = "2397--2400",
booktitle = "Physica Status Solidi C: Conferences",
edition = "10",

}

TY - GEN

T1 - GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor

AU - Hao, M.

AU - Ishikawa, Hiroyasu

AU - Zhang, B.

AU - Egawa, T.

PY - 2004

Y1 - 2004

N2 - A novel process has been developed to grow GaN films and GaN-based light emitting diodes on the sapphire substrates with high-density nano-craters formed on the surface of the substartes in situ metalorganic vapor phase epitaxial (MOCVD) reactor. The whole process is a single and integrated MOCVD run. Firstly a thin GaN layer is grown on the sapphire substrate, and then it is etched away by only flowing the H 2 into the reactor at the higher temperature. It is found, amazingly, that the thermal decomposition of GaN can induce the chemical etching of sapphire, and result in the formation of high-density nano-craters on the surface of the substrates. Finally the device-quality GaN films could be grown on the etched sapphire substrate with the residual gallium droplets as nucleation sites. A preliminary result shows that the output power of GaN light-emitting diodes built on the in situ etched sapphire substrates could be increased by 30%.

AB - A novel process has been developed to grow GaN films and GaN-based light emitting diodes on the sapphire substrates with high-density nano-craters formed on the surface of the substartes in situ metalorganic vapor phase epitaxial (MOCVD) reactor. The whole process is a single and integrated MOCVD run. Firstly a thin GaN layer is grown on the sapphire substrate, and then it is etched away by only flowing the H 2 into the reactor at the higher temperature. It is found, amazingly, that the thermal decomposition of GaN can induce the chemical etching of sapphire, and result in the formation of high-density nano-craters on the surface of the substrates. Finally the device-quality GaN films could be grown on the etched sapphire substrate with the residual gallium droplets as nucleation sites. A preliminary result shows that the output power of GaN light-emitting diodes built on the in situ etched sapphire substrates could be increased by 30%.

UR - http://www.scopus.com/inward/record.url?scp=7044240996&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7044240996&partnerID=8YFLogxK

U2 - 10.1002/pssc.200404982

DO - 10.1002/pssc.200404982

M3 - Conference contribution

AN - SCOPUS:7044240996

VL - 1

SP - 2397

EP - 2400

BT - Physica Status Solidi C: Conferences

ER -