GaN MESFETs on (111) Si substrate grown by MOCVD

T. Egawa, N. Nakada, Hiroyasu Ishikawa, M. Umeno

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al0.27Ga0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/mm with a complete pinch-off for the 2.5 μm gate-length. The Al0.27Ga0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions, which results from the better thermal properties of Si than those of sapphire.

Original languageEnglish
Pages (from-to)1816-1818
Number of pages3
JournalElectronics Letters
Volume36
Issue number21
DOIs
Publication statusPublished - 2000 Oct 12
Externally publishedYes

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MESFET devices
Metallorganic chemical vapor deposition
Transconductance
Substrates
Sapphire
Surface morphology
Mirrors
Thermodynamic properties
Heating

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

GaN MESFETs on (111) Si substrate grown by MOCVD. / Egawa, T.; Nakada, N.; Ishikawa, Hiroyasu; Umeno, M.

In: Electronics Letters, Vol. 36, No. 21, 12.10.2000, p. 1816-1818.

Research output: Contribution to journalArticle

Egawa, T. ; Nakada, N. ; Ishikawa, Hiroyasu ; Umeno, M. / GaN MESFETs on (111) Si substrate grown by MOCVD. In: Electronics Letters. 2000 ; Vol. 36, No. 21. pp. 1816-1818.
@article{fa26e3d7c0e442d692b9db5c158e5782,
title = "GaN MESFETs on (111) Si substrate grown by MOCVD",
abstract = "A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al0.27Ga0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/mm with a complete pinch-off for the 2.5 μm gate-length. The Al0.27Ga0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions, which results from the better thermal properties of Si than those of sapphire.",
author = "T. Egawa and N. Nakada and Hiroyasu Ishikawa and M. Umeno",
year = "2000",
month = "10",
day = "12",
doi = "10.1049/el:20001282",
language = "English",
volume = "36",
pages = "1816--1818",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "21",

}

TY - JOUR

T1 - GaN MESFETs on (111) Si substrate grown by MOCVD

AU - Egawa, T.

AU - Nakada, N.

AU - Ishikawa, Hiroyasu

AU - Umeno, M.

PY - 2000/10/12

Y1 - 2000/10/12

N2 - A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al0.27Ga0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/mm with a complete pinch-off for the 2.5 μm gate-length. The Al0.27Ga0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions, which results from the better thermal properties of Si than those of sapphire.

AB - A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al0.27Ga0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/mm with a complete pinch-off for the 2.5 μm gate-length. The Al0.27Ga0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions, which results from the better thermal properties of Si than those of sapphire.

UR - http://www.scopus.com/inward/record.url?scp=0034297273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034297273&partnerID=8YFLogxK

U2 - 10.1049/el:20001282

DO - 10.1049/el:20001282

M3 - Article

VL - 36

SP - 1816

EP - 1818

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 21

ER -