GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Hao Jiang, Akihiro Okui, Hiroyasu Ishikawa, Chun Lin Shao, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

GaN-based metal-semiconductor-metal photodetectors (MSM-PDs) with a recessed-electrode structure have been fabricated and characterized. The photodiodes exhibited low leakage currents with a typical value of 51 pA at 10 V. Spectral response revealed a responsivity up to 0.14 A/W at 350 nm under 10 V bias, corresponding to an internal quantum efficiency of about 90%, which is a 55.6% improvement over that of conventional MSM-PDs with planar electrodes. The improvement was attributed to the enhanced and uniform electric field due to the recessed electrodes in the photoactive region, leading to a more efficient carrier collection.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number1 A/B
Publication statusPublished - 2002 Jan 15
Externally publishedYes

Fingerprint

Photodetectors
photometers
Semiconductor materials
Electrodes
electrodes
Metals
metals
Photodiodes
Quantum efficiency
spectral sensitivity
Leakage currents
photodiodes
quantum efficiency
leakage
Electric fields
electric fields

Keywords

  • GaN
  • MSM-PD
  • Quantum efficiency
  • Recessed electrodes
  • Responsivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

GaN metal-semiconductor-metal UV photodetector with recessed electrodes. / Jiang, Hao; Okui, Akihiro; Ishikawa, Hiroyasu; Shao, Chun Lin; Egawa, Takashi; Jimbo, Takashi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 1 A/B, 15.01.2002.

Research output: Contribution to journalArticle

Jiang, Hao ; Okui, Akihiro ; Ishikawa, Hiroyasu ; Shao, Chun Lin ; Egawa, Takashi ; Jimbo, Takashi. / GaN metal-semiconductor-metal UV photodetector with recessed electrodes. In: Japanese Journal of Applied Physics, Part 2: Letters. 2002 ; Vol. 41, No. 1 A/B.
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