GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa; Guang Yuan Zhao; Naoyuki Nakada; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guang Yuan Zhao, Naoyuki Nakada, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

Abstract

A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

Original language	English
Pages (from-to)	492-494
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	5 PART 2
Publication status	Published - 1999 May 1
Externally published	Yes

Keywords

GaN
Intermediate layer
MOCVD
Meltback etching
Si substrate

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

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title = "GaN on Si Substrate with AlGaN/AlN Intermediate Layer",

abstract = "A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.",

keywords = "GaN, Intermediate layer, MOCVD, Meltback etching, Si substrate",

author = "Hiroyasu Ishikawa and Zhao, {Guang Yuan} and Naoyuki Nakada and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",

year = "1999",

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TY - JOUR

T1 - GaN on Si Substrate with AlGaN/AlN Intermediate Layer

AU - Ishikawa, Hiroyasu

AU - Zhao, Guang Yuan

AU - Nakada, Naoyuki

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1999/5/1

Y1 - 1999/5/1

N2 - A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

AB - A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

KW - GaN

KW - Intermediate layer

KW - MOCVD

KW - Meltback etching

KW - Si substrate

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SN - 0021-4922

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 5 PART 2

ER -

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Abstract

Keywords

ASJC Scopus subject areas

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