GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guang Yuan Zhao, Naoyuki Nakada, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

183 Citations (Scopus)

Abstract

A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

Original languageEnglish
Pages (from-to)492-494
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number5 PART 2
Publication statusPublished - 1999 May 1
Externally publishedYes

Fingerprint

Full width at half maximum
Metallorganic chemical vapor deposition
Substrates
Atmospheric pressure
Thermal expansion
metalorganic chemical vapor deposition
Etching
thermal expansion
atmospheric pressure
Photoluminescence
Mirrors
cracks
etching
Single crystals
mirrors
Cracks
photoluminescence
X rays
Thin films
Crystals

Keywords

  • GaN
  • Intermediate layer
  • Meltback etching
  • MOCVD
  • Si substrate

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

GaN on Si Substrate with AlGaN/AlN Intermediate Layer. / Ishikawa, Hiroyasu; Zhao, Guang Yuan; Nakada, Naoyuki; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 5 PART 2, 01.05.1999, p. 492-494.

Research output: Contribution to journalArticle

Ishikawa, Hiroyasu ; Zhao, Guang Yuan ; Nakada, Naoyuki ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi. / GaN on Si Substrate with AlGaN/AlN Intermediate Layer. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999 ; Vol. 38, No. 5 PART 2. pp. 492-494.
@article{934985e30e9042aaa0c806d0c9257a48,
title = "GaN on Si Substrate with AlGaN/AlN Intermediate Layer",
abstract = "A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.",
keywords = "GaN, Intermediate layer, Meltback etching, MOCVD, Si substrate",
author = "Hiroyasu Ishikawa and Zhao, {Guang Yuan} and Naoyuki Nakada and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",
year = "1999",
month = "5",
day = "1",
language = "English",
volume = "38",
pages = "492--494",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 PART 2",

}

TY - JOUR

T1 - GaN on Si Substrate with AlGaN/AlN Intermediate Layer

AU - Ishikawa, Hiroyasu

AU - Zhao, Guang Yuan

AU - Nakada, Naoyuki

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1999/5/1

Y1 - 1999/5/1

N2 - A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

AB - A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

KW - GaN

KW - Intermediate layer

KW - Meltback etching

KW - MOCVD

KW - Si substrate

UR - http://www.scopus.com/inward/record.url?scp=0000070228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000070228&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000070228

VL - 38

SP - 492

EP - 494

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 PART 2

ER -