GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guang Yuan Zhao, Naoyuki Nakada, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

186 Citations (Scopus)

Abstract

A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

Original languageEnglish
Pages (from-to)492-494
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number5 PART 2
Publication statusPublished - 1999 May 1

Keywords

  • GaN
  • Intermediate layer
  • MOCVD
  • Meltback etching
  • Si substrate

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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