GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Petr G. Eliseev, Saulius Juodkazis, Tamoya Sugahara, Hong Bo Sun, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages546-556
Number of pages11
Volume4065
Publication statusPublished - 2000
Externally publishedYes
EventHigh-Power Laser Ablation III - Santa Fe, NM, USA
Duration: 2000 Apr 242000 Apr 28

Other

OtherHigh-Power Laser Ablation III
CitySanta Fe, NM, USA
Period00/4/2400/4/28

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Eliseev, P. G., Juodkazis, S., Sugahara, T., Sun, H. B., Matsuo, S., Sakai, S., & Misawa, H. (2000). GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4065, pp. 546-556). Society of Photo-Optical Instrumentation Engineers.