GaN surface ablation by fs-pulses

atomic force microscopy studies, accumulation effects

Petr G. Eliseev, Saulius Juodkazis, Tamoya Sugahara, Hong Bo Sun, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages546-556
Number of pages11
Volume4065
Publication statusPublished - 2000
Externally publishedYes
EventHigh-Power Laser Ablation III - Santa Fe, NM, USA
Duration: 2000 Apr 242000 Apr 28

Other

OtherHigh-Power Laser Ablation III
CitySanta Fe, NM, USA
Period00/4/2400/4/28

Fingerprint

Ablation
ablation
Laser pulses
Atomic force microscopy
atomic force microscopy
Epitaxial layers
pulses
Laser damage
yield point
Processing
lasers
Mirrors
mirrors
Wavelength
Defects
Lasers
high resolution
defects
wavelengths

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Eliseev, P. G., Juodkazis, S., Sugahara, T., Sun, H. B., Matsuo, S., Sakai, S., & Misawa, H. (2000). GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4065, pp. 546-556). Society of Photo-Optical Instrumentation Engineers.

GaN surface ablation by fs-pulses : atomic force microscopy studies, accumulation effects. / Eliseev, Petr G.; Juodkazis, Saulius; Sugahara, Tamoya; Sun, Hong Bo; Matsuo, Shigeki; Sakai, Shiro; Misawa, Hiroaki.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4065 Society of Photo-Optical Instrumentation Engineers, 2000. p. 546-556.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Eliseev, PG, Juodkazis, S, Sugahara, T, Sun, HB, Matsuo, S, Sakai, S & Misawa, H 2000, GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 4065, Society of Photo-Optical Instrumentation Engineers, pp. 546-556, High-Power Laser Ablation III, Santa Fe, NM, USA, 00/4/24.
Eliseev PG, Juodkazis S, Sugahara T, Sun HB, Matsuo S, Sakai S et al. GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4065. Society of Photo-Optical Instrumentation Engineers. 2000. p. 546-556
Eliseev, Petr G. ; Juodkazis, Saulius ; Sugahara, Tamoya ; Sun, Hong Bo ; Matsuo, Shigeki ; Sakai, Shiro ; Misawa, Hiroaki. / GaN surface ablation by fs-pulses : atomic force microscopy studies, accumulation effects. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4065 Society of Photo-Optical Instrumentation Engineers, 2000. pp. 546-556
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