GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Petr G. Eliseev; Saulius Juodkazis; Tamoya Sugahara; Hong Bo Sun; Shigeki Matsuo; Shiro Sakai; Hiroaki Misawa

doi:10.1117/12.407377

GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Petr G. Eliseev, Saulius Juodkazis, Tamoya Sugahara, Hong Bo Sun, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

Original language	English
Pages (from-to)	546-556
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4065
DOIs	https://doi.org/10.1117/12.407377
Publication status	Published - 2000
Externally published	Yes
Event	High-Power Laser Ablation III - Santa Fe, NM, USA Duration: 2000 Apr 24 → 2000 Apr 28

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.407377

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title = "GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects",

abstract = "Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.",

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pages = "546--556",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - GaN surface ablation by fs-pulses

T2 - High-Power Laser Ablation III

AU - Eliseev, Petr G.

AU - Juodkazis, Saulius

AU - Sugahara, Tamoya

AU - Sun, Hong Bo

AU - Matsuo, Shigeki

AU - Sakai, Shiro

AU - Misawa, Hiroaki

PY - 2000

Y1 - 2000

N2 - Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

AB - Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

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DO - 10.1117/12.407377

M3 - Conference article

AN - SCOPUS:0033701890

SN - 0277-786X

VL - 4065

SP - 546

EP - 556

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 24 April 2000 through 28 April 2000

ER -

GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Abstract

ASJC Scopus subject areas

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