GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Petr G. Eliseev, Saulius Juodkazis, Tamoya Sugahara, Hong Bo Sun, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

Original languageEnglish
Pages (from-to)546-556
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4065
DOIs
Publication statusPublished - 2000 Jan 1
EventHigh-Power Laser Ablation III - Santa Fe, NM, USA
Duration: 2000 Apr 242000 Apr 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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