Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing

H. Shimizu, Kentaro Kyuno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)796-797
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

Cite this

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title = "Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing",
author = "H. Shimizu and Kentaro Kyuno",
year = "2004",
month = "9",
day = "1",
language = "English",
pages = "796--797",
journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing

AU - Shimizu, H.

AU - Kyuno, Kentaro

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 796

EP - 797

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

ER -