Generation mechanism of photoinduced paramagnetic centers from preexisting precursors in high-purity silicas

Hiroyuki Nishikawa, Ryuta Nakamura, Ryoichi Tohmon, Yoshimichi Ohki, Yuryo Sakurai, Kaya Nagasawa, Yoshimasa Hama

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High-purity silicas synthesized by various manufacturing methods were studied by electron-spin resonance after being irradiated by ArF excimer laser (6.4 eV) at room temperature. Ee centers (?Si) are induced in all samples, while nonbridging oxygen hole centers (?Si-O) appear only in oxygen-surplus silicas and in a sample which has an absorption band at 5.1 eV. The concentration of Ee centers varies from sample to sample, ranging between 1014 and 1016 spins/cm3 for the exposure at the average power density of 28 mJ/cm2 per pulse at 15 Hz for 1 h. The sample dependence regarding the species and concentrations of photoinduced defects is well explained in terms of transformation of preexisting precursors to paramagnetic defects through a two-photon-absorption process.

Original languageEnglish
Pages (from-to)7828-7834
Number of pages7
JournalPhysical Review B
Issue number11
Publication statusPublished - 1990 Jan 1


ASJC Scopus subject areas

  • Condensed Matter Physics

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