Grain growth enhancement of electroplated copper film by supercritical annealing

Kazuyoshi Ueno, Yuji Shimada, Shigeru Yomogida, Seishi Akahori, Tomohiko Yamamoto, Takamasa Yamaguchi, Yoshinori Aoki, Akiko Matsuyama, Takashi Yata, Hideki Hashimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The resistivity increase caused by grain boundary (GB) scattering is a challenging problem in the formation of narrow copper (Cu) interconnects less than 100nm wide. In order to reduce GB scattering, a new annealing method was successfully developed to enhance the grain growth of electroplated Cu films using supercritical (SC) CO2 with H2. In order to determine the effect of H2, the Cu surface was analyzed using X-ray photoelectron spectroscopy (XPS). The amounts of oxygen (O) and carbon (C) at the Cu surface after SC annealing were reduced with increasing H2 pressure. Surface migration was considered to be enhanced by the reduced amount of O and C, which led to grain growth enhancement. The cross-sectional grain structure in 100-nm-wide interconnect trenches was observed using secondary ion microscopy (SIM). The Cu grains inside the trench were found to be affected by the microstructure in the Cu overburden. Accordingly, Cu grain growth in trenches is also expected to be enhanced by SC annealing.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume49
Issue number5 PART 3
DOIs
Publication statusPublished - 2010 May

Fingerprint

Grain growth
Annealing
Copper
copper
annealing
augmentation
Grain boundaries
Scattering
Crystal microstructure
grain boundaries
Microscopic examination
X ray photoelectron spectroscopy
Microstructure
Carbon
Oxygen
scattering
Ions
photoelectron spectroscopy
microscopy
microstructure

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ueno, K., Shimada, Y., Yomogida, S., Akahori, S., Yamamoto, T., Yamaguchi, T., ... Hashimoto, H. (2010). Grain growth enhancement of electroplated copper film by supercritical annealing. Japanese Journal of Applied Physics, 49(5 PART 3). https://doi.org/10.1143/JJAP.49.05FA08

Grain growth enhancement of electroplated copper film by supercritical annealing. / Ueno, Kazuyoshi; Shimada, Yuji; Yomogida, Shigeru; Akahori, Seishi; Yamamoto, Tomohiko; Yamaguchi, Takamasa; Aoki, Yoshinori; Matsuyama, Akiko; Yata, Takashi; Hashimoto, Hideki.

In: Japanese Journal of Applied Physics, Vol. 49, No. 5 PART 3, 05.2010.

Research output: Contribution to journalArticle

Ueno, K, Shimada, Y, Yomogida, S, Akahori, S, Yamamoto, T, Yamaguchi, T, Aoki, Y, Matsuyama, A, Yata, T & Hashimoto, H 2010, 'Grain growth enhancement of electroplated copper film by supercritical annealing', Japanese Journal of Applied Physics, vol. 49, no. 5 PART 3. https://doi.org/10.1143/JJAP.49.05FA08
Ueno, Kazuyoshi ; Shimada, Yuji ; Yomogida, Shigeru ; Akahori, Seishi ; Yamamoto, Tomohiko ; Yamaguchi, Takamasa ; Aoki, Yoshinori ; Matsuyama, Akiko ; Yata, Takashi ; Hashimoto, Hideki. / Grain growth enhancement of electroplated copper film by supercritical annealing. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 5 PART 3.
@article{6a25557730d145ada848ef63cfd27ecc,
title = "Grain growth enhancement of electroplated copper film by supercritical annealing",
abstract = "The resistivity increase caused by grain boundary (GB) scattering is a challenging problem in the formation of narrow copper (Cu) interconnects less than 100nm wide. In order to reduce GB scattering, a new annealing method was successfully developed to enhance the grain growth of electroplated Cu films using supercritical (SC) CO2 with H2. In order to determine the effect of H2, the Cu surface was analyzed using X-ray photoelectron spectroscopy (XPS). The amounts of oxygen (O) and carbon (C) at the Cu surface after SC annealing were reduced with increasing H2 pressure. Surface migration was considered to be enhanced by the reduced amount of O and C, which led to grain growth enhancement. The cross-sectional grain structure in 100-nm-wide interconnect trenches was observed using secondary ion microscopy (SIM). The Cu grains inside the trench were found to be affected by the microstructure in the Cu overburden. Accordingly, Cu grain growth in trenches is also expected to be enhanced by SC annealing.",
author = "Kazuyoshi Ueno and Yuji Shimada and Shigeru Yomogida and Seishi Akahori and Tomohiko Yamamoto and Takamasa Yamaguchi and Yoshinori Aoki and Akiko Matsuyama and Takashi Yata and Hideki Hashimoto",
year = "2010",
month = "5",
doi = "10.1143/JJAP.49.05FA08",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 PART 3",

}

TY - JOUR

T1 - Grain growth enhancement of electroplated copper film by supercritical annealing

AU - Ueno, Kazuyoshi

AU - Shimada, Yuji

AU - Yomogida, Shigeru

AU - Akahori, Seishi

AU - Yamamoto, Tomohiko

AU - Yamaguchi, Takamasa

AU - Aoki, Yoshinori

AU - Matsuyama, Akiko

AU - Yata, Takashi

AU - Hashimoto, Hideki

PY - 2010/5

Y1 - 2010/5

N2 - The resistivity increase caused by grain boundary (GB) scattering is a challenging problem in the formation of narrow copper (Cu) interconnects less than 100nm wide. In order to reduce GB scattering, a new annealing method was successfully developed to enhance the grain growth of electroplated Cu films using supercritical (SC) CO2 with H2. In order to determine the effect of H2, the Cu surface was analyzed using X-ray photoelectron spectroscopy (XPS). The amounts of oxygen (O) and carbon (C) at the Cu surface after SC annealing were reduced with increasing H2 pressure. Surface migration was considered to be enhanced by the reduced amount of O and C, which led to grain growth enhancement. The cross-sectional grain structure in 100-nm-wide interconnect trenches was observed using secondary ion microscopy (SIM). The Cu grains inside the trench were found to be affected by the microstructure in the Cu overburden. Accordingly, Cu grain growth in trenches is also expected to be enhanced by SC annealing.

AB - The resistivity increase caused by grain boundary (GB) scattering is a challenging problem in the formation of narrow copper (Cu) interconnects less than 100nm wide. In order to reduce GB scattering, a new annealing method was successfully developed to enhance the grain growth of electroplated Cu films using supercritical (SC) CO2 with H2. In order to determine the effect of H2, the Cu surface was analyzed using X-ray photoelectron spectroscopy (XPS). The amounts of oxygen (O) and carbon (C) at the Cu surface after SC annealing were reduced with increasing H2 pressure. Surface migration was considered to be enhanced by the reduced amount of O and C, which led to grain growth enhancement. The cross-sectional grain structure in 100-nm-wide interconnect trenches was observed using secondary ion microscopy (SIM). The Cu grains inside the trench were found to be affected by the microstructure in the Cu overburden. Accordingly, Cu grain growth in trenches is also expected to be enhanced by SC annealing.

UR - http://www.scopus.com/inward/record.url?scp=77953158724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953158724&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.05FA08

DO - 10.1143/JJAP.49.05FA08

M3 - Article

AN - SCOPUS:77953158724

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 PART 3

ER -