Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Al0.26Ga0.74N/AlN/GaN heterostructures with a 1-nm-thick AlN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a sheet carrier density of approximately 1 × 1013/cm2. High-electron- mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm.

Original languageEnglish
Pages (from-to)1031-1034
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004 Dec 1
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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