Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

M. Miyoshi, A. Imanishi, Hiroyasu Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Al 0.26Ga 0.74N/AlN/GaN heterostructures with a 1-nm-thick AlN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm 2/Vs at 15 K with a sheet carrier density of approximately 1 × 10 13/cm 2. High-electron- mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages1031-1034
Number of pages4
Publication statusPublished - 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

Other

OtherIEEE International Electron Devices Meeting, 2004 IEDM
CountryUnited States
CitySan Francisco, CA
Period04/12/1304/12/15

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., ... Oda, O. (2004). Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 1031-1034)