Abstract
In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.
| Original language | English |
|---|---|
| Pages (from-to) | 245-251 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 259 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2003 Dec |
| Externally published | Yes |
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Keywords
- A3. Metalorganic chemical vapor deposition
- B1. Nitrides
- B2. Semiconducting III-V materials
- B2. Semiconducting quaternary alloy
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire. / Liu, Yang; Egawa, Takashi; Ishikawa, Hiroyasu; Jimbo, Takashi.
In: Journal of Crystal Growth, Vol. 259, No. 3, 12.2003, p. 245-251.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
AU - Liu, Yang
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Jimbo, Takashi
PY - 2003/12
Y1 - 2003/12
N2 - In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.
AB - In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.
KW - A3. Metalorganic chemical vapor deposition
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
KW - B2. Semiconducting quaternary alloy
UR - http://www.scopus.com/inward/record.url?scp=0142095023&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0142095023&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2003.07.014
DO - 10.1016/j.jcrysgro.2003.07.014
M3 - Article
VL - 259
SP - 245
EP - 251
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -