TY - JOUR
T1 - Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
AU - Liu, Yang
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Jimbo, Takashi
N1 - Funding Information:
One of the authors Yang Liu is grateful to JSPS (Japan Society for the Promotion of Science) for the award of Post Doctoral Fellowship (ID#P02329) and he also would like to extend his thanks to Associate Prof. Chunlin Shao, Dr. Maosheng Hao, Dr. Baijun Zhang and Dr. S. Arulkumaran for their kind help and valuable advices.
PY - 2003/12
Y1 - 2003/12
N2 - In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.
AB - In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.
KW - A3. Metalorganic chemical vapor deposition
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
KW - B2. Semiconducting quaternary alloy
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U2 - 10.1016/j.jcrysgro.2003.07.014
DO - 10.1016/j.jcrysgro.2003.07.014
M3 - Article
AN - SCOPUS:0142095023
VL - 259
SP - 245
EP - 251
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -