Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Yang Liu; Takashi Egawa; Hiroyasu Ishikawa; Takashi Jimbo

doi:10.1016/j.jcrysgro.2003.07.014

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Journal of Crystal Growth
Volume	259
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.07.014
Publication status	Published - 2003 Dec 1
Externally published	Yes

Keywords

A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting III-V materials
B2. Semiconducting quaternary alloy

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2003.07.014

Fingerprint Dive into the research topics of 'Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire'. Together they form a unique fingerprint.

Cite this

@article{6124cae65aa548a795eb7eb73ef2c193,

title = "Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire",

abstract = "In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.",

keywords = "A3. Metalorganic chemical vapor deposition, B1. Nitrides, B2. Semiconducting III-V materials, B2. Semiconducting quaternary alloy",

author = "Yang Liu and Takashi Egawa and Hiroyasu Ishikawa and Takashi Jimbo",

year = "2003",

month = dec,

day = "1",

doi = "10.1016/j.jcrysgro.2003.07.014",

language = "English",

volume = "259",

pages = "245--251",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

AU - Liu, Yang

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Jimbo, Takashi

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.

AB - In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting quaternary alloy

UR - http://www.scopus.com/inward/record.url?scp=0142095023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142095023&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2003.07.014

DO - 10.1016/j.jcrysgro.2003.07.014

M3 - Article

AN - SCOPUS:0142095023

VL - 259

SP - 245

EP - 251

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -