Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Yang Liu; Takashi Egawa; Hiroyasu Ishikawa; Takashi Jimbo

doi:10.1016/j.jcrysgro.2003.07.014

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo

Research output: Contribution to journal › Article

31 Citations (Scopus)

Abstract

In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Journal of Crystal Growth
Volume	259
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.07.014
Publication status	Published - 2003 Dec 1

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Keywords

A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting III-V materials
B2. Semiconducting quaternary alloy

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Liu, Y., Egawa, T., Ishikawa, H., & Jimbo, T. (2003). Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire. Journal of Crystal Growth, 259(3), 245-251. https://doi.org/10.1016/j.jcrysgro.2003.07.014

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abstract = "In this paper, the growth and characterizations of AlInGaN quaternary alloys on sapphire substrate are presented. The room temperature PL peaks of the quaternary layers were in the range of 335-375 nm with full-width at half-maximum (FWHM) values ranged between 50 and 69 meV. The X-ray rocking curves of quaternary layers for (0 0 0 4) diffraction exhibited narrow FWHM values ranged from 250 to 320 arcsec. To the best of our knowledge, these are the best results among those published in the literature. In additoin, anomalous blue-shift behavior was observed in PL measurement when temperature changed from 300 to 77 K, which was due to the band tail states in quaternary AlInGaN caused by alloy compositional fluctuation.",

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10.1016/j.jcrysgro.2003.07.014