| Original language | English |
|---|---|
| Pages (from-to) | 245-251 |
| Journal | J. Crystal Growth |
| Volume | 259 |
| Publication status | Published - 2003 Dec 1 |
Cite this
Liu, Y., Egawa, T., Ishikawa, H., & Jimbo, T. (2003). Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire. J. Crystal Growth, 259, 245-251.