| Original language | English |
|---|---|
| Pages (from-to) | 245-251 |
| Journal | J. Crystal Growth |
| Volume | 259 |
| Publication status | Published - 2003 Dec 1 |
Cite this
Liu, Y., Egawa, T., Ishikawa, H., & Jimbo, T. (2003). Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire. J. Crystal Growth, 259, 245-251.
Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire. / Liu, Y.; Egawa, T.; Ishikawa, H.; Jimbo, T.
In: J. Crystal Growth, Vol. 259, 01.12.2003, p. 245-251.Research output: Contribution to journal › Article
Liu, Y, Egawa, T, Ishikawa, H & Jimbo, T 2003, 'Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire', J. Crystal Growth, vol. 259, pp. 245-251.
Liu Y, Egawa T, Ishikawa H, Jimbo T. Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire. J. Crystal Growth. 2003 Dec 1;259:245-251.
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