Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire

Y. Liu, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)245-251
JournalJ. Crystal Growth
Volume259
Publication statusPublished - 2003 Dec 1

Cite this

Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire. / Liu, Y.; Egawa, T.; Ishikawa, H.; Jimbo, T.

In: J. Crystal Growth, Vol. 259, 01.12.2003, p. 245-251.

Research output: Contribution to journalArticle

@article{b869c0205fe34ad4bd804c93dda328ee,
title = "Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire",
author = "Y. Liu and T. Egawa and H. Ishikawa and T. Jimbo",
year = "2003",
month = "12",
day = "1",
language = "English",
volume = "259",
pages = "245--251",
journal = "J. Crystal Growth",

}

TY - JOUR

T1 - Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire

AU - Liu, Y.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

PY - 2003/12/1

Y1 - 2003/12/1

M3 - Article

VL - 259

SP - 245

EP - 251

JO - J. Crystal Growth

JF - J. Crystal Growth

ER -