Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si

K.Kita K.Kita, K.Kyuno K.Kyuno, A.Toriumi A.Toriumi, Kentaro Kyuno

Research output: Contribution to journalArticle

82 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Volume85
Publication statusPublished - 2004 Apr 1

Cite this

Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si. / K.Kita, K.Kita; K.Kyuno, K.Kyuno; A.Toriumi, A.Toriumi; Kyuno, Kentaro.

In: Applied Physics Letters, Vol. 85, 01.04.2004.

Research output: Contribution to journalArticle

K.Kita, K.Kita ; K.Kyuno, K.Kyuno ; A.Toriumi, A.Toriumi ; Kyuno, Kentaro. / Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si. In: Applied Physics Letters. 2004 ; Vol. 85.
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