| Original language | English |
|---|---|
| Journal | Applied Physics Letters |
| Volume | 85 |
| Publication status | Published - 2004 Apr 1 |
Cite this
K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T., & Kyuno, K. (2004). Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si. Applied Physics Letters, 85.
Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si. / K.Kita, K.Kita; K.Kyuno, K.Kyuno; A.Toriumi, A.Toriumi; Kyuno, Kentaro.
In: Applied Physics Letters, Vol. 85, 01.04.2004.Research output: Contribution to journal › Article
K.Kita, KK, K.Kyuno, KK, A.Toriumi, AT & Kyuno, K 2004, 'Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si', Applied Physics Letters, vol. 85.
K.Kita KK, K.Kyuno KK, A.Toriumi AT, Kyuno K. Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si. Applied Physics Letters. 2004 Apr 1;85.
@article{e821ebb53c294e3d9f70e2cceb467db6,
title = "Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si",
author = "K.Kita K.Kita and K.Kyuno K.Kyuno and A.Toriumi A.Toriumi and Kentaro Kyuno",
year = "2004",
month = "4",
day = "1",
language = "English",
volume = "85",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
}
TY - JOUR
T1 - Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si
AU - K.Kita, K.Kita
AU - K.Kyuno, K.Kyuno
AU - A.Toriumi, A.Toriumi
AU - Kyuno, Kentaro
PY - 2004/4/1
Y1 - 2004/4/1
M3 - Article
VL - 85
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
ER -