Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si

K.Kita K.Kita, K.Kyuno K.Kyuno, A.Toriumi A.Toriumi, Kentaro Kyuno

Research output: Contribution to journal › Article

Cite this

@article{e821ebb53c294e3d9f70e2cceb467db6,

title = "Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si",

author = "K.Kita K.Kita and K.Kyuno K.Kyuno and A.Toriumi A.Toriumi and Kentaro Kyuno",

year = "2004",

month = apr,

day = "1",

language = "English",

volume = "85",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}