Growth mechanism difference of sputtered HfO2 on Ge and on Si

Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1063/1.1767607

Growth mechanism difference of sputtered HfO₂ on Ge and on Si

Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

88 Citations (Scopus)

Abstract

Difference in growth mechanism of HfO₂ on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO₂ film was thinner on Ge than that on Si. An advantage of HfO₂/Ge was found over HfO₂/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO₂ deposition have a crucial role for the thickness differences of both interface layers and HfO₂ films on those substrates.

Original language	English
Pages (from-to)	52-54
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.1767607
Publication status	Published - 2004 Jul 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth mechanism difference of sputtered HfO2 on Ge and on Si",

abstract = "Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.",

author = "Koji Kita and Kentaro Kyuno and Akira Toriumi",

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AU - Kita, Koji

AU - Kyuno, Kentaro

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N2 - Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.

AB - Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.

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