Growth mechanism difference of sputtered HfO2 on Ge and on Si

Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.

Original languageEnglish
Pages (from-to)52-54
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number1
DOIs
Publication statusPublished - 2004 Jul 5
Externally publishedYes

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sputtering
oxides
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth mechanism difference of sputtered HfO2 on Ge and on Si. / Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

In: Applied Physics Letters, Vol. 85, No. 1, 05.07.2004, p. 52-54.

Research output: Contribution to journalArticle

Kita, Koji ; Kyuno, Kentaro ; Toriumi, Akira. / Growth mechanism difference of sputtered HfO2 on Ge and on Si. In: Applied Physics Letters. 2004 ; Vol. 85, No. 1. pp. 52-54.
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