Growth mechanism difference of sputtered HfO2 on Ge and on Si

Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1063/1.1767607

Growth mechanism difference of sputtered HfO₂ on Ge and on Si

Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journal › Article

82 Citations (Scopus)

Abstract

Difference in growth mechanism of HfO₂ on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO₂ film was thinner on Ge than that on Si. An advantage of HfO₂/Ge was found over HfO₂/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO₂ deposition have a crucial role for the thickness differences of both interface layers and HfO₂ films on those substrates.

Original language	English
Pages (from-to)	52-54
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.1767607
Publication status	Published - 2004 Jul 5
Externally published	Yes

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sputtering

oxides

thin films

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Kita, K., Kyuno, K., & Toriumi, A. (2004). Growth mechanism difference of sputtered HfO₂ on Ge and on Si. Applied Physics Letters, 85(1), 52-54. https://doi.org/10.1063/1.1767607

Growth mechanism difference of sputtered HfO₂ on Ge and on Si. / Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

In: Applied Physics Letters, Vol. 85, No. 1, 05.07.2004, p. 52-54.

Research output: Contribution to journal › Article

Kita, K, Kyuno, K & Toriumi, A 2004, 'Growth mechanism difference of sputtered HfO₂ on Ge and on Si', Applied Physics Letters, vol. 85, no. 1, pp. 52-54. https://doi.org/10.1063/1.1767607

Kita K, Kyuno K, Toriumi A. Growth mechanism difference of sputtered HfO₂ on Ge and on Si. Applied Physics Letters. 2004 Jul 5;85(1):52-54. https://doi.org/10.1063/1.1767607

Kita, Koji ; Kyuno, Kentaro ; Toriumi, Akira. / Growth mechanism difference of sputtered HfO₂ on Ge and on Si. In: Applied Physics Letters. 2004 ; Vol. 85, No. 1. pp. 52-54.

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10.1063/1.1767607