Abstract
Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 52-54 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2004 Jul 5 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Growth mechanism difference of sputtered HfO2 on Ge and on Si. / Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.
In: Applied Physics Letters, Vol. 85, No. 1, 05.07.2004, p. 52-54.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth mechanism difference of sputtered HfO2 on Ge and on Si
AU - Kita, Koji
AU - Kyuno, Kentaro
AU - Toriumi, Akira
PY - 2004/7/5
Y1 - 2004/7/5
N2 - Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.
AB - Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.
UR - http://www.scopus.com/inward/record.url?scp=3242712413&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3242712413&partnerID=8YFLogxK
U2 - 10.1063/1.1767607
DO - 10.1063/1.1767607
M3 - Article
AN - SCOPUS:3242712413
VL - 85
SP - 52
EP - 54
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
ER -