Abstract
Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 52-54 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2004 Jul 5 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Kita, K., Kyuno, K., & Toriumi, A. (2004). Growth mechanism difference of sputtered HfO2 on Ge and on Si. Applied Physics Letters, 85(1), 52-54. https://doi.org/10.1063/1.1767607