Growth mechanism difference of sputtered HfO2 on Ge and on Si

Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

91 Citations (Scopus)


Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.

Original languageEnglish
Pages (from-to)52-54
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2004 Jul 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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