Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE

M. Miyoshi, Hiroyasu Ishikawa, T. Egawa, T. Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

For the purpose of the practical use of GaN-based electronic devices, we demonstrated the growth of 100-mm-diameter AlGaN/GaN heterostructures on c-face sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surface, good crystal quality and good uniformity of the Al composition across the entire epitaxial wafer. These epitaxial wafers showed a relatively high electron mobility, 1320 ± 80 cm 2/Vs with the sheet carrier concentration of 8.4 ± 0.5 × 10 12/cm 3 at room temperature, across the entire epitaxial wafer. High-electron-mobility transistors (HEMTs) fabricated on the 100-mm-diameter epitaxial wafer also exhibited good dc characteristics. Typical values of the peak extrinsic transconductance and the maximum drain current density were 200 mS/mm and 534 mA/mm, respectively, for the device with the gate length of 2.0 μm and the gate width of 15.0 μm.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2091-2094
Number of pages4
Edition7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period03/5/2503/5/30

Fingerprint

Metallorganic vapor phase epitaxy
Aluminum Oxide
Electron mobility
Drain current
Transconductance
High electron mobility transistors
Sapphire
vapor phase epitaxy
Carrier concentration
Heterojunctions
sapphire
Current density
wafers
Crystals
Substrates
Chemical analysis
Temperature
transconductance
high electron mobility transistors
electron mobility

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Miyoshi, M., Ishikawa, H., Egawa, T., & Jimbo, T. (2003). Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. In Physica Status Solidi C: Conferences (7 ed., pp. 2091-2094) https://doi.org/10.1002/pssc.200303445

Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. / Miyoshi, M.; Ishikawa, Hiroyasu; Egawa, T.; Jimbo, T.

Physica Status Solidi C: Conferences. 7. ed. 2003. p. 2091-2094.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyoshi, M, Ishikawa, H, Egawa, T & Jimbo, T 2003, Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. in Physica Status Solidi C: Conferences. 7 edn, pp. 2091-2094, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 03/5/25. https://doi.org/10.1002/pssc.200303445
Miyoshi M, Ishikawa H, Egawa T, Jimbo T. Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. In Physica Status Solidi C: Conferences. 7 ed. 2003. p. 2091-2094 https://doi.org/10.1002/pssc.200303445
Miyoshi, M. ; Ishikawa, Hiroyasu ; Egawa, T. ; Jimbo, T. / Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. Physica Status Solidi C: Conferences. 7. ed. 2003. pp. 2091-2094
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