Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto Miyoshi, Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

4 Citations (Scopus)


For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

Original languageEnglish
Pages (from-to)2077-2081
Number of pages5
JournalIEICE Transactions on Electronics
Issue number10
Publication statusPublished - 2003 Oct



  • AlGaN/GaN
  • Bowing
  • Heterostructure
  • Uniformity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M., & Oda, O. (2003). Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE. IEICE Transactions on Electronics, E86-C(10), 2077-2081.