Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto Miyoshi, Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

Original languageEnglish
Pages (from-to)2077-2081
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE86-C
Issue number10
Publication statusPublished - 2003 Oct
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Aluminum Oxide
Sapphire
Heterojunctions
Bending (forming)
Substrates
Electric properties
Fabrication
Crystals
Chemical analysis
aluminum gallium nitride

Keywords

  • AlGaN/GaN
  • Bowing
  • Heterostructure
  • MOVPE
  • Uniformity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M., & Oda, O. (2003). Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE. IEICE Transactions on Electronics, E86-C(10), 2077-2081.

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE. / Miyoshi, Makoto; Sakai, Masahiro; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Tanaka, Mitsuhiro; Oda, Osamu.

In: IEICE Transactions on Electronics, Vol. E86-C, No. 10, 10.2003, p. 2077-2081.

Research output: Contribution to journalArticle

Miyoshi, M, Sakai, M, Ishikawa, H, Egawa, T, Jimbo, T, Tanaka, M & Oda, O 2003, 'Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE', IEICE Transactions on Electronics, vol. E86-C, no. 10, pp. 2077-2081.
Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M et al. Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE. IEICE Transactions on Electronics. 2003 Oct;E86-C(10):2077-2081.
Miyoshi, Makoto ; Sakai, Masahiro ; Ishikawa, Hiroyasu ; Egawa, Takashi ; Jimbo, Takashi ; Tanaka, Mitsuhiro ; Oda, Osamu. / Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE. In: IEICE Transactions on Electronics. 2003 ; Vol. E86-C, No. 10. pp. 2077-2081.
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