Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto Miyoshi; Masahiro Sakai; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Mitsuhiro Tanaka; Osamu Oda

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto Miyoshi, Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journal › Article › peer-review

Abstract

For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al_0.26Ga_0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

Original language	English
Pages (from-to)	2077-2081
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E86-C
Issue number	10
Publication status	Published - 2003 Oct
Externally published	Yes

Keywords

AlGaN/GaN
Bowing
Heterostructure
MOVPE
Uniformity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{d82bd5c990e74648a2290649721444f0,

title = "Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE",

abstract = "For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.",

keywords = "AlGaN/GaN, Bowing, Heterostructure, MOVPE, Uniformity",

author = "Makoto Miyoshi and Masahiro Sakai and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Mitsuhiro Tanaka and Osamu Oda",

year = "2003",

month = oct,

language = "English",

volume = "E86-C",

pages = "2077--2081",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "10",

}

TY - JOUR

T1 - Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

AU - Miyoshi, Makoto

AU - Sakai, Masahiro

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Tanaka, Mitsuhiro

AU - Oda, Osamu

PY - 2003/10

Y1 - 2003/10

N2 - For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

AB - For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

KW - AlGaN/GaN

KW - Bowing

KW - Heterostructure

KW - MOVPE

KW - Uniformity

UR - http://www.scopus.com/inward/record.url?scp=0041558849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041558849&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0041558849

SN - 0916-8524

VL - E86-C

SP - 2077

EP - 2081

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 10

ER -

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this