Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer

Hiroyasu Ishikawa, M. Kato, M. S. Hao, T. Egawa, T. Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We have investigated the crystal growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Both the density of pits and the full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing thickness of the AlGaN/AlN intermediate layer. We have also investigated the quality of GaN and wafer bowing as a function of the GaN layer thickness. With the increase of GaN layer thickness, the FWHM of XRC decreased and the bowing distance of the wafer increases. While the narrowest FWHM value (GaN (0004)) was obtained to be 700 arcsec from 1.5-μm-thick GaN, the bowing distance of the wafer was 100 μm and some cracks were observed at the edge of the wafer. We conclude that the optimum thickness of GaN on 4-inch Si substrate is 1 μm. The FWHM for the near band edge emission of GaN peaking at 364.5 nm was obtained to be 43.9 meV from 1-μm-thick GaN.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2177-2180
Number of pages4
Edition7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period03/5/2503/5/30

Fingerprint

Full width at half maximum
Bending (forming)
wafers
Substrates
Crystallization
Crystal growth
crystal growth
cracks
Cracks
X rays
aluminum gallium nitride
curves
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Ishikawa, H., Kato, M., Hao, M. S., Egawa, T., & Jimbo, T. (2003). Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. In Physica Status Solidi C: Conferences (7 ed., pp. 2177-2180) https://doi.org/10.1002/pssc.200303332

Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. / Ishikawa, Hiroyasu; Kato, M.; Hao, M. S.; Egawa, T.; Jimbo, T.

Physica Status Solidi C: Conferences. 7. ed. 2003. p. 2177-2180.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ishikawa, H, Kato, M, Hao, MS, Egawa, T & Jimbo, T 2003, Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. in Physica Status Solidi C: Conferences. 7 edn, pp. 2177-2180, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 03/5/25. https://doi.org/10.1002/pssc.200303332
Ishikawa H, Kato M, Hao MS, Egawa T, Jimbo T. Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. In Physica Status Solidi C: Conferences. 7 ed. 2003. p. 2177-2180 https://doi.org/10.1002/pssc.200303332
Ishikawa, Hiroyasu ; Kato, M. ; Hao, M. S. ; Egawa, T. ; Jimbo, T. / Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Physica Status Solidi C: Conferences. 7. ed. 2003. pp. 2177-2180
@inproceedings{312f0ef1c880422e82c11f1f5d622779,
title = "Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer",
abstract = "We have investigated the crystal growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Both the density of pits and the full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing thickness of the AlGaN/AlN intermediate layer. We have also investigated the quality of GaN and wafer bowing as a function of the GaN layer thickness. With the increase of GaN layer thickness, the FWHM of XRC decreased and the bowing distance of the wafer increases. While the narrowest FWHM value (GaN (0004)) was obtained to be 700 arcsec from 1.5-μm-thick GaN, the bowing distance of the wafer was 100 μm and some cracks were observed at the edge of the wafer. We conclude that the optimum thickness of GaN on 4-inch Si substrate is 1 μm. The FWHM for the near band edge emission of GaN peaking at 364.5 nm was obtained to be 43.9 meV from 1-μm-thick GaN.",
author = "Hiroyasu Ishikawa and M. Kato and Hao, {M. S.} and T. Egawa and T. Jimbo",
year = "2003",
doi = "10.1002/pssc.200303332",
language = "English",
pages = "2177--2180",
booktitle = "Physica Status Solidi C: Conferences",
edition = "7",

}

TY - GEN

T1 - Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer

AU - Ishikawa, Hiroyasu

AU - Kato, M.

AU - Hao, M. S.

AU - Egawa, T.

AU - Jimbo, T.

PY - 2003

Y1 - 2003

N2 - We have investigated the crystal growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Both the density of pits and the full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing thickness of the AlGaN/AlN intermediate layer. We have also investigated the quality of GaN and wafer bowing as a function of the GaN layer thickness. With the increase of GaN layer thickness, the FWHM of XRC decreased and the bowing distance of the wafer increases. While the narrowest FWHM value (GaN (0004)) was obtained to be 700 arcsec from 1.5-μm-thick GaN, the bowing distance of the wafer was 100 μm and some cracks were observed at the edge of the wafer. We conclude that the optimum thickness of GaN on 4-inch Si substrate is 1 μm. The FWHM for the near band edge emission of GaN peaking at 364.5 nm was obtained to be 43.9 meV from 1-μm-thick GaN.

AB - We have investigated the crystal growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Both the density of pits and the full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing thickness of the AlGaN/AlN intermediate layer. We have also investigated the quality of GaN and wafer bowing as a function of the GaN layer thickness. With the increase of GaN layer thickness, the FWHM of XRC decreased and the bowing distance of the wafer increases. While the narrowest FWHM value (GaN (0004)) was obtained to be 700 arcsec from 1.5-μm-thick GaN, the bowing distance of the wafer was 100 μm and some cracks were observed at the edge of the wafer. We conclude that the optimum thickness of GaN on 4-inch Si substrate is 1 μm. The FWHM for the near band edge emission of GaN peaking at 364.5 nm was obtained to be 43.9 meV from 1-μm-thick GaN.

UR - http://www.scopus.com/inward/record.url?scp=84875091508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875091508&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303332

DO - 10.1002/pssc.200303332

M3 - Conference contribution

SP - 2177

EP - 2180

BT - Physica Status Solidi C: Conferences

ER -