Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer

H. Ishikawa, M. Kato, M.S. Hao, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

8 Citations (Scopus)
Original languageEnglish
Pages (from-to)Tu-P3.005
JournalDefault journal
Publication statusPublished - 2003 May 1

Cite this

Ishikawa, H., Kato, M., Hao, M. S., Egawa, T., & Jimbo, T. (2003). Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer. Default journal, Tu-P3.005.

Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer. / Ishikawa, H.; Kato, M.; Hao, M.S.; Egawa, T.; Jimbo, T.

In: Default journal, 01.05.2003, p. Tu-P3.005.

Research output: Contribution to journalArticle

Ishikawa, H. ; Kato, M. ; Hao, M.S. ; Egawa, T. ; Jimbo, T. / Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer. In: Default journal. 2003 ; pp. Tu-P3.005.
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AU - Jimbo, T.

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