Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer

H. Ishikawa, M. Kato, M.S. Hao, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

8 Citations (Scopus)
Original languageEnglish
Pages (from-to)Tu-P3.005
JournalDefault journal
Publication statusPublished - 2003 May 1

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Ishikawa, H., Kato, M., Hao, M. S., Egawa, T., & Jimbo, T. (2003). Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer. Default journal, Tu-P3.005.