Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno, Tomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, Yoshitaka Kuraoka, Mitsuhiro Tanaka, Osamu Oda

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50 Citations (Scopus)

Abstract

High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.

Original languageEnglish
Pages (from-to)6-11
Number of pages6
JournalJournal of Crystal Growth
Volume244
Issue number1
DOIs
Publication statusPublished - 2002 Sep
Externally publishedYes

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Keywords

  • A1. Characterization
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

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