Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Masahiro Sakai; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno; Tomohiko Shibata; Keiichiro Asai; Shigeaki Sumiya; Yoshitaka Kuraoka; Mitsuhiro Tanaka; Osamu Oda

doi:10.1016/S0022-0248(02)01573-7

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno, Tomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, Yoshitaka Kuraoka, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm²/Vs with the carrier concentration of 7.6 × 10¹⁶ cm^-3 at 300 K along with low dislocation density of 5 × 10⁷ cm^-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.

Original language	English
Pages (from-to)	6-11
Number of pages	6
Journal	Journal of Crystal Growth
Volume	244
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(02)01573-7
Publication status	Published - 2002 Sept 1
Externally published	Yes

Keywords

A1. Characterization
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)01573-7

Cite this

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title = "Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE",

abstract = "High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 {\=2} 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.",

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author = "Masahiro Sakai and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno and Tomohiko Shibata and Keiichiro Asai and Shigeaki Sumiya and Yoshitaka Kuraoka and Mitsuhiro Tanaka and Osamu Oda",

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doi = "10.1016/S0022-0248(02)01573-7",

language = "English",

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T1 - Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

AU - Sakai, Masahiro

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

AU - Shibata, Tomohiko

AU - Asai, Keiichiro

AU - Sumiya, Shigeaki

AU - Kuraoka, Yoshitaka

AU - Tanaka, Mitsuhiro

AU - Oda, Osamu

PY - 2002/9/1

Y1 - 2002/9/1

N2 - High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.

AB - High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.

KW - A1. Characterization

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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