Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno, Tomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, Yoshitaka Kuraoka, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.

Original languageEnglish
Pages (from-to)6-11
Number of pages6
JournalJournal of Crystal Growth
Volume244
Issue number1
DOIs
Publication statusPublished - 2002 Sep
Externally publishedYes

Fingerprint

Hall mobility
Metallorganic vapor phase epitaxy
Vapor phase epitaxy
Aluminum Oxide
Full width at half maximum
Sapphire
vapor phase epitaxy
Surface morphology
Carrier concentration
Atomic force microscopy
Photoluminescence
sapphire
templates
Metals
atomic force microscopy
photoluminescence
X rays
curves
metals
x rays

Keywords

  • A1. Characterization
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE. / Sakai, Masahiro; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi; Shibata, Tomohiko; Asai, Keiichiro; Sumiya, Shigeaki; Kuraoka, Yoshitaka; Tanaka, Mitsuhiro; Oda, Osamu.

In: Journal of Crystal Growth, Vol. 244, No. 1, 09.2002, p. 6-11.

Research output: Contribution to journalArticle

Sakai, M, Ishikawa, H, Egawa, T, Jimbo, T, Umeno, M, Shibata, T, Asai, K, Sumiya, S, Kuraoka, Y, Tanaka, M & Oda, O 2002, 'Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE', Journal of Crystal Growth, vol. 244, no. 1, pp. 6-11. https://doi.org/10.1016/S0022-0248(02)01573-7
Sakai, Masahiro ; Ishikawa, Hiroyasu ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi ; Shibata, Tomohiko ; Asai, Keiichiro ; Sumiya, Shigeaki ; Kuraoka, Yoshitaka ; Tanaka, Mitsuhiro ; Oda, Osamu. / Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE. In: Journal of Crystal Growth. 2002 ; Vol. 244, No. 1. pp. 6-11.
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