GROWTH of platy InGaAs single crystals and fabrication of 1.3 μm laser diodes

K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High quality InxGa1-xAs platy single crystals (x: 0.1 - 0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.

Original languageEnglish
Title of host publicationIPRM'07
Subtitle of host publicationIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages339-342
Number of pages4
DOIs
Publication statusPublished - 2007 Oct 2
EventIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
Duration: 2007 May 142007 May 18

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

ConferenceIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
CountryJapan
CityMatsue
Period07/5/1407/5/18

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kinoshita, K., Ueda, T., Adachi, S., Masaki, T., Yoda, S., Arai, M., Watanabe, T., Yuda, M., & Kondo, Y. (2007). GROWTH of platy InGaAs single crystals and fabrication of 1.3 μm laser diodes. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings (pp. 339-342). [4265949] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2007.381192