Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

G. Y. Zhao, M. Adachi, Hiroyasu Ishikawa, T. Egawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs.

Original languageEnglish
Pages (from-to)2195-2197
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number14
Publication statusPublished - 2000 Oct 2
Externally publishedYes

Fingerprint

metalorganic chemical vapor deposition
flow velocity
profiles
saturation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zhao, G. Y., Adachi, M., Ishikawa, H., Egawa, T., Umeno, M., & Jimbo, T. (2000). Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition. Applied Physics Letters, 77(14), 2195-2197.

Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition. / Zhao, G. Y.; Adachi, M.; Ishikawa, Hiroyasu; Egawa, T.; Umeno, M.; Jimbo, T.

In: Applied Physics Letters, Vol. 77, No. 14, 02.10.2000, p. 2195-2197.

Research output: Contribution to journalArticle

Zhao, GY, Adachi, M, Ishikawa, H, Egawa, T, Umeno, M & Jimbo, T 2000, 'Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition', Applied Physics Letters, vol. 77, no. 14, pp. 2195-2197.
Zhao GY, Adachi M, Ishikawa H, Egawa T, Umeno M, Jimbo T. Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition. Applied Physics Letters. 2000 Oct 2;77(14):2195-2197.
Zhao, G. Y. ; Adachi, M. ; Ishikawa, Hiroyasu ; Egawa, T. ; Umeno, M. ; Jimbo, T. / Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition. In: Applied Physics Letters. 2000 ; Vol. 77, No. 14. pp. 2195-2197.
@article{0b6ac289f63247879768e25e1a7ee3ec,
title = "Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition",
abstract = "Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs.",
author = "Zhao, {G. Y.} and M. Adachi and Hiroyasu Ishikawa and T. Egawa and M. Umeno and T. Jimbo",
year = "2000",
month = "10",
day = "2",
language = "English",
volume = "77",
pages = "2195--2197",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

AU - Zhao, G. Y.

AU - Adachi, M.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

AU - Umeno, M.

AU - Jimbo, T.

PY - 2000/10/2

Y1 - 2000/10/2

N2 - Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs.

AB - Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs.

UR - http://www.scopus.com/inward/record.url?scp=0001691608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001691608&partnerID=8YFLogxK

M3 - Article

VL - 77

SP - 2195

EP - 2197

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -