Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Toshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi

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9 Citations (Scopus)

Abstract

Characteristics of hafnium silicate as gate dielectric in n-GaN capacitors were investigated. The Hf 0.57 Si 0.43 O x , Hf 0.64 Si 0.36 O x and HfO 2 films exhibited high dielectric constants of 15.4, 15.9, and 17.6, respectively. The Hf 0.57 Si 0.43 O x and Hf 0.64 Si 0.36 O x films, which had an amorphous structure, showed superior properties, including a minimal flatband voltage (V fb ) hysteresis (≤70 mV) and a small V fb shift (≤-0.45 V), as well as a low interface state density (∼4 × 10 11 cm -2 eV -1 at -0.4 eV from conduction band), and a high breakdown electric field (≥8.6 MV cm -1 ) compared to those of a polycrystalline HfO 2 film.

Original languageEnglish
Article number011009
JournalApplied Physics Express
Volume12
Issue number1
DOIs
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T., & Ohi, A. (2019). Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors. Applied Physics Express, 12(1), [011009]. https://doi.org/10.7567/1882-0786/aaf62a