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Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors
Toshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi
Research output: Contribution to journal › Article
10
Citations
(Scopus)