Half-micron pitch Cu interconnection technology

Kazuyoshi Ueno, Koichi Ohto, Kinji Tsunenari

Research output: Contribution to journalConference article

Abstract

Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

Original languageEnglish
Pages (from-to)27-28
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 1995 Jun 61995 Jun 8

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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