Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1995 Dec 1|
|Event||Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 1995 Jun 6 → 1995 Jun 8
ASJC Scopus subject areas
- Electrical and Electronic Engineering