Half-micron pitch Cu interconnection technology

Kazuyoshi Ueno, Koichi Ohto, Kinji Tsunenari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherIEEE
Pages27-28
Number of pages2
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 1995 Jun 61995 Jun 8

Other

OtherProceedings of the 1995 Symposium on VLSI Technology
CityKyoto, Jpn
Period95/6/695/6/8

Fingerprint

Oxidation
Metallorganic chemical vapor deposition
Thermodynamic stability
Alumina

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ueno, K., Ohto, K., & Tsunenari, K. (1995). Half-micron pitch Cu interconnection technology. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 27-28). IEEE.

Half-micron pitch Cu interconnection technology. / Ueno, Kazuyoshi; Ohto, Koichi; Tsunenari, Kinji.

Digest of Technical Papers - Symposium on VLSI Technology. IEEE, 1995. p. 27-28.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ueno, K, Ohto, K & Tsunenari, K 1995, Half-micron pitch Cu interconnection technology. in Digest of Technical Papers - Symposium on VLSI Technology. IEEE, pp. 27-28, Proceedings of the 1995 Symposium on VLSI Technology, Kyoto, Jpn, 95/6/6.
Ueno K, Ohto K, Tsunenari K. Half-micron pitch Cu interconnection technology. In Digest of Technical Papers - Symposium on VLSI Technology. IEEE. 1995. p. 27-28
Ueno, Kazuyoshi ; Ohto, Koichi ; Tsunenari, Kinji. / Half-micron pitch Cu interconnection technology. Digest of Technical Papers - Symposium on VLSI Technology. IEEE, 1995. pp. 27-28
@inproceedings{a2e0c99b84224d188e7a4c4337e22056,
title = "Half-micron pitch Cu interconnection technology",
abstract = "Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.",
author = "Kazuyoshi Ueno and Koichi Ohto and Kinji Tsunenari",
year = "1995",
language = "English",
pages = "27--28",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "IEEE",

}

TY - GEN

T1 - Half-micron pitch Cu interconnection technology

AU - Ueno, Kazuyoshi

AU - Ohto, Koichi

AU - Tsunenari, Kinji

PY - 1995

Y1 - 1995

N2 - Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

AB - Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

UR - http://www.scopus.com/inward/record.url?scp=0029484254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029484254&partnerID=8YFLogxK

M3 - Conference contribution

SP - 27

EP - 28

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - IEEE

ER -