Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices

T. Egawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser diode (VCSELD) has been grown on a Si substrate using metalorganic chemical vapour deposition (MOCVD). The VCSELD with a 23-pair of AlAs/Al0.1Ga0.9As distributed Bragg reflector on a Si substrate exhibited a threshold current of 223 mA under continuous-wave condition at 220 K. Electroluminescence observation showed that an optical degradation was caused by generation and growth of dark-line defects. An MOCVD-grown InGaN/AlGaN double-heterostructure light-emitting diode on a sapphire substrate exhibited an optical output power of 0.17 mW, an external quantum efficiency of 0.2%, a peak emission wavelength at 440 nm with a full width at half-maximum of 63 nm and a stable operation up to 3000 h under 30 mA DC operation at 30°C. A high current level of 281 mA/mm and a large transconductance (gm) of 33 mS/mm have been achieved for a GaN metal semiconductor field-effect transistor (MESFET) with a gate length of 2 μm and a width of 200 μm at 25°C. The GaN MESFET at 400°C showed degraded characteristics: a low gm of 13.4 mS/mm, a gate leakage and a poor pinch-off.

Original languageEnglish
Pages (from-to)363-367
Number of pages5
JournalBulletin of Materials Science
Volume22
Issue number3
Publication statusPublished - 1999 May
Externally publishedYes

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Epitaxial growth
MESFET devices
Optoelectronic devices
Surface emitting lasers
Metallorganic chemical vapor deposition
Semiconductor lasers
Substrates
Distributed Bragg reflectors
Aluminum Oxide
Electroluminescence
Transconductance
Full width at half maximum
Quantum efficiency
Sapphire
Semiconductor quantum wells
Light emitting diodes
Heterojunctions
Degradation
Wavelength
Defects

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices. / Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.

In: Bulletin of Materials Science, Vol. 22, No. 3, 05.1999, p. 363-367.

Research output: Contribution to journalArticle

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