High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer

Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, Takashi Jimbo

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

InGaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) on Si (111) substrate were grown by metalorganic chemical vapor deposition. Crack-free films on 2-inch wafer were obtained using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. High-resolution X-ray diffraction (HRXRD) reveals the LED on Si is of high crystalline quality. Dislocation density of MQW active layer was investigated by cathodoluminescence (CL) at room temperature. The operating voltages of 3.7 V and 4.2 V and the output powers of 34.8 μW and 34.5 μW at 20 mA were obtained for the lateral and the vertical conduction, respectively. The forward series resistances are 33 Ω and 42 Ω for the lateral and the vertical conduction, respectively. The EL peaks at 453 nm with a full width at half maximum (FWHM) of 22 nm at 20 mA current. These characteristics are comparable to those of LED on sapphire. Especially, the LED on Si shows a high saturation operating current due to the good thermal conductivity of Si substrate.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number3 A
Publication statusPublished - 2003 Mar 1
Externally publishedYes

Fingerprint

Buffer layers
Semiconductor quantum wells
Light emitting diodes
Multilayers
light emitting diodes
buffers
quantum wells
conduction
Cathodoluminescence
Metallorganic chemical vapor deposition
Substrates
Full width at half maximum
cathodoluminescence
Dislocations (crystals)
Sapphire
metalorganic chemical vapor deposition
Thermal conductivity
sapphire
thermal conductivity
cracks

Keywords

  • AlN/GaN multilayers
  • InGaN
  • LED
  • MOCVD
  • MQW

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. / Zhang, Baijun; Egawa, Takashi; Ishikawa, Hiroyasu; Liu, Yang; Jimbo, Takashi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 3 A, 01.03.2003.

Research output: Contribution to journalArticle

@article{102241a12cc6429d8b3de5536634ae9d,
title = "High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer",
abstract = "InGaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) on Si (111) substrate were grown by metalorganic chemical vapor deposition. Crack-free films on 2-inch wafer were obtained using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. High-resolution X-ray diffraction (HRXRD) reveals the LED on Si is of high crystalline quality. Dislocation density of MQW active layer was investigated by cathodoluminescence (CL) at room temperature. The operating voltages of 3.7 V and 4.2 V and the output powers of 34.8 μW and 34.5 μW at 20 mA were obtained for the lateral and the vertical conduction, respectively. The forward series resistances are 33 Ω and 42 Ω for the lateral and the vertical conduction, respectively. The EL peaks at 453 nm with a full width at half maximum (FWHM) of 22 nm at 20 mA current. These characteristics are comparable to those of LED on sapphire. Especially, the LED on Si shows a high saturation operating current due to the good thermal conductivity of Si substrate.",
keywords = "AlN/GaN multilayers, InGaN, LED, MOCVD, MQW",
author = "Baijun Zhang and Takashi Egawa and Hiroyasu Ishikawa and Yang Liu and Takashi Jimbo",
year = "2003",
month = "3",
day = "1",
language = "English",
volume = "42",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3 A",

}

TY - JOUR

T1 - High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer

AU - Zhang, Baijun

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Liu, Yang

AU - Jimbo, Takashi

PY - 2003/3/1

Y1 - 2003/3/1

N2 - InGaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) on Si (111) substrate were grown by metalorganic chemical vapor deposition. Crack-free films on 2-inch wafer were obtained using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. High-resolution X-ray diffraction (HRXRD) reveals the LED on Si is of high crystalline quality. Dislocation density of MQW active layer was investigated by cathodoluminescence (CL) at room temperature. The operating voltages of 3.7 V and 4.2 V and the output powers of 34.8 μW and 34.5 μW at 20 mA were obtained for the lateral and the vertical conduction, respectively. The forward series resistances are 33 Ω and 42 Ω for the lateral and the vertical conduction, respectively. The EL peaks at 453 nm with a full width at half maximum (FWHM) of 22 nm at 20 mA current. These characteristics are comparable to those of LED on sapphire. Especially, the LED on Si shows a high saturation operating current due to the good thermal conductivity of Si substrate.

AB - InGaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) on Si (111) substrate were grown by metalorganic chemical vapor deposition. Crack-free films on 2-inch wafer were obtained using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. High-resolution X-ray diffraction (HRXRD) reveals the LED on Si is of high crystalline quality. Dislocation density of MQW active layer was investigated by cathodoluminescence (CL) at room temperature. The operating voltages of 3.7 V and 4.2 V and the output powers of 34.8 μW and 34.5 μW at 20 mA were obtained for the lateral and the vertical conduction, respectively. The forward series resistances are 33 Ω and 42 Ω for the lateral and the vertical conduction, respectively. The EL peaks at 453 nm with a full width at half maximum (FWHM) of 22 nm at 20 mA current. These characteristics are comparable to those of LED on sapphire. Especially, the LED on Si shows a high saturation operating current due to the good thermal conductivity of Si substrate.

KW - AlN/GaN multilayers

KW - InGaN

KW - LED

KW - MOCVD

KW - MQW

UR - http://www.scopus.com/inward/record.url?scp=0038398939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038398939&partnerID=8YFLogxK

M3 - Article

VL - 42

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

ER -