Abstract
InGaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) on Si (111) substrate were grown by metalorganic chemical vapor deposition. Crack-free films on 2-inch wafer were obtained using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. High-resolution X-ray diffraction (HRXRD) reveals the LED on Si is of high crystalline quality. Dislocation density of MQW active layer was investigated by cathodoluminescence (CL) at room temperature. The operating voltages of 3.7 V and 4.2 V and the output powers of 34.8 μW and 34.5 μW at 20 mA were obtained for the lateral and the vertical conduction, respectively. The forward series resistances are 33 Ω and 42 Ω for the lateral and the vertical conduction, respectively. The EL peaks at 453 nm with a full width at half maximum (FWHM) of 22 nm at 20 mA current. These characteristics are comparable to those of LED on sapphire. Especially, the LED on Si shows a high saturation operating current due to the good thermal conductivity of Si substrate.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 3 A |
| Publication status | Published - 2003 Mar 1 |
| Externally published | Yes |
Fingerprint
Keywords
- AlN/GaN multilayers
- InGaN
- LED
- MOCVD
- MQW
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. / Zhang, Baijun; Egawa, Takashi; Ishikawa, Hiroyasu; Liu, Yang; Jimbo, Takashi.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 3 A, 01.03.2003.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer
AU - Zhang, Baijun
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Liu, Yang
AU - Jimbo, Takashi
PY - 2003/3/1
Y1 - 2003/3/1
N2 - InGaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) on Si (111) substrate were grown by metalorganic chemical vapor deposition. Crack-free films on 2-inch wafer were obtained using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. High-resolution X-ray diffraction (HRXRD) reveals the LED on Si is of high crystalline quality. Dislocation density of MQW active layer was investigated by cathodoluminescence (CL) at room temperature. The operating voltages of 3.7 V and 4.2 V and the output powers of 34.8 μW and 34.5 μW at 20 mA were obtained for the lateral and the vertical conduction, respectively. The forward series resistances are 33 Ω and 42 Ω for the lateral and the vertical conduction, respectively. The EL peaks at 453 nm with a full width at half maximum (FWHM) of 22 nm at 20 mA current. These characteristics are comparable to those of LED on sapphire. Especially, the LED on Si shows a high saturation operating current due to the good thermal conductivity of Si substrate.
AB - InGaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) on Si (111) substrate were grown by metalorganic chemical vapor deposition. Crack-free films on 2-inch wafer were obtained using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer. High-resolution X-ray diffraction (HRXRD) reveals the LED on Si is of high crystalline quality. Dislocation density of MQW active layer was investigated by cathodoluminescence (CL) at room temperature. The operating voltages of 3.7 V and 4.2 V and the output powers of 34.8 μW and 34.5 μW at 20 mA were obtained for the lateral and the vertical conduction, respectively. The forward series resistances are 33 Ω and 42 Ω for the lateral and the vertical conduction, respectively. The EL peaks at 453 nm with a full width at half maximum (FWHM) of 22 nm at 20 mA current. These characteristics are comparable to those of LED on sapphire. Especially, the LED on Si shows a high saturation operating current due to the good thermal conductivity of Si substrate.
KW - AlN/GaN multilayers
KW - InGaN
KW - LED
KW - MOCVD
KW - MQW
UR - http://www.scopus.com/inward/record.url?scp=0038398939&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038398939&partnerID=8YFLogxK
M3 - Article
VL - 42
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -