High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Tomoki Akimoto, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages351-353
Number of pages3
ISBN (Electronic)9781538665084
DOIs
Publication statusPublished - 2019 Mar
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 2019 Mar 122019 Mar 15

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

Keywords

  • CVD
  • current
  • multilayer graphene

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

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  • Cite this

    Akimoto, T., & Ueno, K. (2019). High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 351-353). [8731128] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731128