Abstract
To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.
| Original language | English |
|---|---|
| Title of host publication | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 351-353 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781538665084 |
| DOIs | |
| Publication status | Published - 2019 Mar 1 |
| Event | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15 |
Publication series
| Name | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
|---|
Conference
| Conference | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
|---|---|
| Country | Singapore |
| City | Singapore |
| Period | 19/3/12 → 19/3/15 |
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Keywords
- current
- CVD
- multilayer graphene
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Hardware and Architecture
Cite this
High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. / Akimoto, Tomoki; Ueno, Kazuyoshi.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 351-353 8731128 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current
AU - Akimoto, Tomoki
AU - Ueno, Kazuyoshi
PY - 2019/3/1
Y1 - 2019/3/1
N2 - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.
AB - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.
KW - current
KW - CVD
KW - multilayer graphene
UR - http://www.scopus.com/inward/record.url?scp=85067805776&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067805776&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2019.8731128
DO - 10.1109/EDTM.2019.8731128
M3 - Conference contribution
AN - SCOPUS:85067805776
T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
SP - 351
EP - 353
BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
ER -