High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Tomoki Akimoto, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages351-353
Number of pages3
ISBN (Electronic)9781538665084
DOIs
Publication statusPublished - 2019 Mar 1
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 2019 Mar 122019 Mar 15

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

Fingerprint

Graphite
Graphene
Chemical vapor deposition
crystallinity
graphene
Multilayers
vapor deposition
catalysts
Catalysts
Temperature
flow velocity
Flow rate
Crystalline materials
Substrates
temperature

Keywords

  • current
  • CVD
  • multilayer graphene

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

Cite this

Akimoto, T., & Ueno, K. (2019). High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 351-353). [8731128] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731128

High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. / Akimoto, Tomoki; Ueno, Kazuyoshi.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 351-353 8731128 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akimoto, T & Ueno, K 2019, High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731128, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 351-353, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731128
Akimoto T, Ueno K. High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 351-353. 8731128. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731128
Akimoto, Tomoki ; Ueno, Kazuyoshi. / High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 351-353 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).
@inproceedings{be162807399b4caf89aa63acf6b77384,
title = "High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current",
abstract = "To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.",
keywords = "current, CVD, multilayer graphene",
author = "Tomoki Akimoto and Kazuyoshi Ueno",
year = "2019",
month = "3",
day = "1",
doi = "10.1109/EDTM.2019.8731128",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "351--353",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

}

TY - GEN

T1 - High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

AU - Akimoto, Tomoki

AU - Ueno, Kazuyoshi

PY - 2019/3/1

Y1 - 2019/3/1

N2 - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

AB - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

KW - current

KW - CVD

KW - multilayer graphene

UR - http://www.scopus.com/inward/record.url?scp=85067805776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85067805776&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731128

DO - 10.1109/EDTM.2019.8731128

M3 - Conference contribution

AN - SCOPUS:85067805776

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 351

EP - 353

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -