High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Tomoki Akimoto; Kazuyoshi Ueno

doi:10.1109/EDTM.2019.8731128

High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Tomoki Akimoto, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	351-353
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731128
Publication status	Published - 2019 Mar
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	19/3/12 → 19/3/15

Keywords

CVD
current
multilayer graphene

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Access to Document

10.1109/EDTM.2019.8731128

Cite this

Akimoto, T., & Ueno, K. (2019). High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 351-353). [8731128] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731128

High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. / Akimoto, Tomoki; Ueno, Kazuyoshi.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 351-353 8731128 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Akimoto, T & Ueno, K 2019, High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731128, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 351-353, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731128

Akimoto T, Ueno K. High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 351-353. 8731128. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731128

Akimoto, Tomoki ; Ueno, Kazuyoshi. / High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 351-353 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

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title = "High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current",

abstract = "To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.",

keywords = "CVD, current, multilayer graphene",

author = "Tomoki Akimoto and Kazuyoshi Ueno",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number JP 18K 04289. This work was also supported by SIT Research Center for Green Innovation. The authors thank H. Kawakami for discussion and help. Publisher Copyright: {\textcopyright} 2019 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

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doi = "10.1109/EDTM.2019.8731128",

language = "English",

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N2 - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

AB - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

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High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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