Abstract
This letter describes a successfully developed enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET with a buried p+-n junction gate structure for low-voltage-operated mobile applications. The buried p+-GaAs gate structure effectively reduced on-resistance (Ron) and suppressed drain-current frequency dispersion for the device with high positive threshold voltage, resulting in high-efficiency characteristics under low-voltage operation. The fabricated p+-gate HJFET exhibited a low Ron of 1.4 Ω · mm with a threshold voltage of +0.4 V. Negligible frequency dispersion characteristics were obtained through pulsed current-voltage measurements for the device. Under a single 2.7-V operation, a 19.8-mm gate width device exhibited a power added efficiency of 51.9% with 26.8-dBm output power and a -40.1-dBc adjacent channel power ratio using a 1.95-GHz wideband code-division multiple-access signal.
Original language | English |
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Pages (from-to) | 636-639 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 27 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2006 Aug 1 |
Externally published | Yes |
Keywords
- Buried gate
- Enhancement mode
- Heterojunction FET
- High efficiency
- Low-voltage operation
- p-GaAs gate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering