High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

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The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.

Original languageEnglish
Pages (from-to)1710-1712
Number of pages3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2004 Sep 6


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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