The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Sept 6|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)