High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata

Research output: Contribution to journalArticle

87 Citations (Scopus)
Original languageEnglish
Pages (from-to)1710-1712
JournalDefault journal
Volume85
Publication statusPublished - 2004 Sep 1

Cite this

High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy. / Miyoshi, M.; Ishikawa, H.; Egawa, T.; Asai, K.; Mouri, M.; Shibata, T.

In: Default journal, Vol. 85, 01.09.2004, p. 1710-1712.

Research output: Contribution to journalArticle

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AU - Egawa, T.

AU - Asai, K.

AU - Mouri, M.

AU - Shibata, T.

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