High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Kazuhiko Honjo, Hidenori Shimawaki, Shin'ichi Tanaka, Yasuyuki Suzuki

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

Original languageEnglish
Pages733-736
Number of pages4
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong
Duration: 1997 Dec 21997 Dec 5

Other

OtherProceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3)
CityHong Kong, Hong Kong
Period97/12/297/12/5

ASJC Scopus subject areas

  • Engineering(all)

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    Honjo, K., Shimawaki, H., Tanaka, S., & Suzuki, Y. (1997). High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. 733-736. Paper presented at Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3), Hong Kong, Hong Kong, .