Abstract
AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
Original language | English |
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Pages | 733-736 |
Number of pages | 4 |
Publication status | Published - 1997 Dec 1 |
Event | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong Duration: 1997 Dec 2 → 1997 Dec 5 |
Other
Other | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) |
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City | Hong Kong, Hong Kong |
Period | 97/12/2 → 97/12/5 |
ASJC Scopus subject areas
- Engineering(all)