Abstract
AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
| Original language | English |
|---|---|
| Title of host publication | Asia-Pacific Microwave Conference Proceedings, APMC |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 733-736 |
| Number of pages | 4 |
| Volume | 2 |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong Duration: 1997 Dec 2 → 1997 Dec 5 |
Other
| Other | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) |
|---|---|
| City | Hong Kong, Hong Kong |
| Period | 97/12/2 → 97/12/5 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. / Honjo, Kazuhiko; Shimawaki, Hidenori; Tanaka, Shin'ichi; Suzuki, Yasuyuki.
Asia-Pacific Microwave Conference Proceedings, APMC. Vol. 2 Piscataway, NJ, United States : IEEE, 1997. p. 733-736.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges
AU - Honjo, Kazuhiko
AU - Shimawaki, Hidenori
AU - Tanaka, Shin'ichi
AU - Suzuki, Yasuyuki
PY - 1997
Y1 - 1997
N2 - AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
AB - AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
UR - http://www.scopus.com/inward/record.url?scp=0031388781&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031388781&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031388781
VL - 2
SP - 733
EP - 736
BT - Asia-Pacific Microwave Conference Proceedings, APMC
PB - IEEE
CY - Piscataway, NJ, United States
ER -