Abstract
AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
| Original language | English |
|---|---|
| Pages | 733-736 |
| Number of pages | 4 |
| Publication status | Published - 1997 Dec 1 |
| Event | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong Duration: 1997 Dec 2 → 1997 Dec 5 |
Other
| Other | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) |
|---|---|
| City | Hong Kong, Hong Kong |
| Period | 97/12/2 → 97/12/5 |
ASJC Scopus subject areas
- Engineering(all)
Fingerprint Dive into the research topics of 'High-f<sub>max</sub> AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges'. Together they form a unique fingerprint.
Cite this
Honjo, K., Shimawaki, H., Tanaka, S., & Suzuki, Y. (1997). High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. 733-736. Paper presented at Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3), Hong Kong, Hong Kong, .