High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Kazuhiko Honjo; Hidenori Shimawaki; Shin'ichi Tanaka; Yasuyuki Suzuki

High-f_max AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Kazuhiko Honjo, Hidenori Shimawaki, Shin'ichi Tanaka, Yasuyuki Suzuki

Research output: Contribution to conference › Paper › peer-review

Abstract

AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

Original language	English
Pages	733-736
Number of pages	4
Publication status	Published - 1997 Dec 1
Event	Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong Duration: 1997 Dec 2 → 1997 Dec 5

Other

Other	Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3)
City	Hong Kong, Hong Kong
Period	97/12/2 → 97/12/5

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges",

abstract = "AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.",

author = "Kazuhiko Honjo and Hidenori Shimawaki and Shin'ichi Tanaka and Yasuyuki Suzuki",

year = "1997",

month = dec,

day = "1",

language = "English",

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note = "Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) ; Conference date: 02-12-1997 Through 05-12-1997",

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T1 - High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

AU - Honjo, Kazuhiko

AU - Shimawaki, Hidenori

AU - Tanaka, Shin'ichi

AU - Suzuki, Yasuyuki

PY - 1997/12/1

Y1 - 1997/12/1

N2 - AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

AB - AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

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M3 - Paper

AN - SCOPUS:0031388781

SP - 733

EP - 736

T2 - Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3)

Y2 - 2 December 1997 through 5 December 1997

ER -

High-f_max AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Abstract

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ASJC Scopus subject areas

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