High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Kazuhiko Honjo, Hidenori Shimawaki, Shin'ichi Tanaka, Yasuyuki Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages733-736
Number of pages4
Volume2
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong
Duration: 1997 Dec 21997 Dec 5

Other

OtherProceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3)
CityHong Kong, Hong Kong
Period97/12/297/12/5

Fingerprint

Heterojunction bipolar transistors
Millimeter waves
Broadband amplifiers
Power amplifiers

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Honjo, K., Shimawaki, H., Tanaka, S., & Suzuki, Y. (1997). High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. In Asia-Pacific Microwave Conference Proceedings, APMC (Vol. 2, pp. 733-736). Piscataway, NJ, United States: IEEE.

High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. / Honjo, Kazuhiko; Shimawaki, Hidenori; Tanaka, Shin'ichi; Suzuki, Yasuyuki.

Asia-Pacific Microwave Conference Proceedings, APMC. Vol. 2 Piscataway, NJ, United States : IEEE, 1997. p. 733-736.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Honjo, K, Shimawaki, H, Tanaka, S & Suzuki, Y 1997, High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. in Asia-Pacific Microwave Conference Proceedings, APMC. vol. 2, IEEE, Piscataway, NJ, United States, pp. 733-736, Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3), Hong Kong, Hong Kong, 97/12/2.
Honjo K, Shimawaki H, Tanaka S, Suzuki Y. High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. In Asia-Pacific Microwave Conference Proceedings, APMC. Vol. 2. Piscataway, NJ, United States: IEEE. 1997. p. 733-736
Honjo, Kazuhiko ; Shimawaki, Hidenori ; Tanaka, Shin'ichi ; Suzuki, Yasuyuki. / High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges. Asia-Pacific Microwave Conference Proceedings, APMC. Vol. 2 Piscataway, NJ, United States : IEEE, 1997. pp. 733-736
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