High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Guang Yuan Zhao, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

Original languageEnglish
Pages (from-to)1035-1038
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number3 A
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Two dimensional electron gas
Organic chemicals
Sapphire
metalorganic chemical vapor deposition
Heterojunctions
Chemical vapor deposition
sapphire
Metals
electron mobility
electrical measurement
electron gas
Capacitance measurement
Electron mobility
capacitance
Voltage measurement
atomic force microscopy
Atomic force microscopy

Keywords

  • 2DEG
  • AlGaN/GaN
  • Electron mobility
  • Interface roughness

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition. / Zhao, Guang Yuan; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 3 A, 2000, p. 1035-1038.

Research output: Contribution to journalArticle

@article{ed5e2d2088af48068539c8674b28d02d,
title = "High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition",
abstract = "High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.",
keywords = "2DEG, AlGaN/GaN, Electron mobility, Interface roughness",
author = "Zhao, {Guang Yuan} and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",
year = "2000",
language = "English",
volume = "39",
pages = "1035--1038",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3 A",

}

TY - JOUR

T1 - High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

AU - Zhao, Guang Yuan

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 2000

Y1 - 2000

N2 - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

AB - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

KW - 2DEG

KW - AlGaN/GaN

KW - Electron mobility

KW - Interface roughness

UR - http://www.scopus.com/inward/record.url?scp=0033751205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033751205&partnerID=8YFLogxK

M3 - Article

VL - 39

SP - 1035

EP - 1038

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

ER -