Abstract
High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 1035-1038 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 3 A |
| Publication status | Published - 2000 Dec 1 |
Keywords
- 2DEG
- AlGaN/GaN
- Electron mobility
- Interface roughness
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (2000). High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(3 A), 1035-1038.