High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Guang Yuan Zhao; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno

High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Guang Yuan Zhao, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

Abstract

High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al_0.11Ga_0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm²/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

Original language	English
Pages (from-to)	1035-1038
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	3 A
Publication status	Published - 2000 Dec 1
Externally published	Yes

Keywords

2DEG
AlGaN/GaN
Electron mobility
Interface roughness

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition. / Zhao, Guang Yuan; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 3 A, 01.12.2000, p. 1035-1038.

Research output: Contribution to journal › Article › peer-review

@article{ed5e2d2088af48068539c8674b28d02d,

title = "High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition",

abstract = "High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.",

keywords = "2DEG, AlGaN/GaN, Electron mobility, Interface roughness",

author = "Zhao, {Guang Yuan} and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",

year = "2000",

month = dec,

day = "1",

language = "English",

volume = "39",

pages = "1035--1038",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 A",

}

TY - JOUR

T1 - High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

AU - Zhao, Guang Yuan

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 2000/12/1

Y1 - 2000/12/1

N2 - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

AB - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

KW - 2DEG

KW - AlGaN/GaN

KW - Electron mobility

KW - Interface roughness

UR - http://www.scopus.com/inward/record.url?scp=0033751205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033751205&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033751205

VL - 39

SP - 1035

EP - 1038

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

ER -