Abstract
High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 1035-1038 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 3 A |
| Publication status | Published - 2000 |
| Externally published | Yes |
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Keywords
- 2DEG
- AlGaN/GaN
- Electron mobility
- Interface roughness
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition. / Zhao, Guang Yuan; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 3 A, 2000, p. 1035-1038.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition
AU - Zhao, Guang Yuan
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 2000
Y1 - 2000
N2 - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.
AB - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.
KW - 2DEG
KW - AlGaN/GaN
KW - Electron mobility
KW - Interface roughness
UR - http://www.scopus.com/inward/record.url?scp=0033751205&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033751205&partnerID=8YFLogxK
M3 - Article
VL - 39
SP - 1035
EP - 1038
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -