High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Guang Yuan Zhao; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno

doi:10.1143/jjap.39.1035

High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Guang Yuan Zhao, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al_0.11Ga_0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm²/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

Original language	English
Pages (from-to)	1035-1038
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.39.1035
Publication status	Published - 2000
Externally published	Yes

Keywords

2DEG
AlGaN/GaN
Electron mobility
Interface roughness

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.1035

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title = "High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition",

abstract = "High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.",

keywords = "2DEG, AlGaN/GaN, Electron mobility, Interface roughness",

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TY - JOUR

T1 - High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

AU - Zhao, Guang Yuan

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 2000

Y1 - 2000

N2 - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

AB - High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

KW - 2DEG

KW - AlGaN/GaN

KW - Electron mobility

KW - Interface roughness

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

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ER -

High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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