High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

M. Miyoshi, A. Imanishi, Hiroyasu Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.

Original languageEnglish
Title of host publicationTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Pages193-196
Number of pages4
DOIs
Publication statusPublished - 2004
Externally publishedYes
EventIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium - Monterey, CA
Duration: 2004 Oct 242004 Oct 27

Other

OtherIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
CityMonterey, CA
Period04/10/2404/10/27

Fingerprint

Metallorganic vapor phase epitaxy
High electron mobility transistors
Sapphire
Heterojunctions
Hall mobility
Two dimensional electron gas
Substrates
Temperature

Keywords

  • 100-mm-diameter wafer
  • AlGaN/AlN/GaN
  • Epitaxial AlN/sapphire template
  • HEMT

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., ... Oda, O. (2004). High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. In Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC (pp. 193-196) https://doi.org/10.1109/CSICS.2004.1392534

High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. / Miyoshi, M.; Imanishi, A.; Ishikawa, Hiroyasu; Egawa, T.; Asai, K.; Mouri, M.; Shibata, T.; Tanaka, M.; Oda, O.

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. 2004. p. 193-196.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyoshi, M, Imanishi, A, Ishikawa, H, Egawa, T, Asai, K, Mouri, M, Shibata, T, Tanaka, M & Oda, O 2004, High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. in Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. pp. 193-196, IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, Monterey, CA, 04/10/24. https://doi.org/10.1109/CSICS.2004.1392534
Miyoshi M, Imanishi A, Ishikawa H, Egawa T, Asai K, Mouri M et al. High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. In Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. 2004. p. 193-196 https://doi.org/10.1109/CSICS.2004.1392534
Miyoshi, M. ; Imanishi, A. ; Ishikawa, Hiroyasu ; Egawa, T. ; Asai, K. ; Mouri, M. ; Shibata, T. ; Tanaka, M. ; Oda, O. / High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. 2004. pp. 193-196
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abstract = "Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.",
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AU - Imanishi, A.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

AU - Asai, K.

AU - Mouri, M.

AU - Shibata, T.

AU - Tanaka, M.

AU - Oda, O.

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AB - Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.

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