High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.

Original languageEnglish
Title of host publicationIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary
Subtitle of host publicationCompounding Your Chips in Monterey - Technical Digest 2004
Pages193-196
Number of pages4
DOIs
Publication statusPublished - 2004 Dec 1
Externally publishedYes
EventIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium - Monterey, CA, United States
Duration: 2004 Oct 242004 Oct 27

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Conference

ConferenceIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
CountryUnited States
CityMonterey, CA
Period04/10/2404/10/27

Keywords

  • 100-mm-diameter wafer
  • AlGaN/AlN/GaN
  • Epitaxial AlN/sapphire template
  • HEMT

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE'. Together they form a unique fingerprint.

Cite this