High performance AlGaN/GaN HEMTs with recessed gate

Y. Sano, J. Mita, T. Yamada, T. Makita, K. Kaifu, Hiroyasu Ishikawa, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

Abstract

High performance AlGaN / GaN high electron mobility transistors with recessed gate have been successfally fabricated on sapphire substrate. The HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 × 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.

Original languageEnglish
Pages (from-to)1511-1514
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number2
Publication statusPublished - 2002
Externally publishedYes

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Keywords

  • AlGaN
  • GaN
  • HEMT
  • High Frequency
  • Microwave
  • Recessed Gate
  • Sapphire

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., ... Jimbo, T. (2002). High performance AlGaN/GaN HEMTs with recessed gate. Materials Science Forum, 389-393(2), 1511-1514.