Abstract
High performance AlGaN / GaN high electron mobility transistors with recessed gate have been successfally fabricated on sapphire substrate. The HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 × 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 1511-1514 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 389-393 |
| Issue number | 2 |
| Publication status | Published - 2002 |
| Externally published | Yes |
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Keywords
- AlGaN
- GaN
- HEMT
- High Frequency
- Microwave
- Recessed Gate
- Sapphire
ASJC Scopus subject areas
- Materials Science(all)
Cite this
High performance AlGaN/GaN HEMTs with recessed gate. / Sano, Y.; Mita, J.; Yamada, T.; Makita, T.; Kaifu, K.; Ishikawa, Hiroyasu; Egawa, T.; Jimbo, T.
In: Materials Science Forum, Vol. 389-393, No. 2, 2002, p. 1511-1514.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High performance AlGaN/GaN HEMTs with recessed gate
AU - Sano, Y.
AU - Mita, J.
AU - Yamada, T.
AU - Makita, T.
AU - Kaifu, K.
AU - Ishikawa, Hiroyasu
AU - Egawa, T.
AU - Jimbo, T.
PY - 2002
Y1 - 2002
N2 - High performance AlGaN / GaN high electron mobility transistors with recessed gate have been successfally fabricated on sapphire substrate. The HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 × 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.
AB - High performance AlGaN / GaN high electron mobility transistors with recessed gate have been successfally fabricated on sapphire substrate. The HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 × 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.
KW - AlGaN
KW - GaN
KW - HEMT
KW - High Frequency
KW - Microwave
KW - Recessed Gate
KW - Sapphire
UR - http://www.scopus.com/inward/record.url?scp=0036430465&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036430465&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0036430465
VL - 389-393
SP - 1511
EP - 1514
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
IS - 2
ER -