High performance AlGaN/GaN HEMTs with recessed gate

Y. Sano, J. Mita, T. Yamada, T. Makita, K. Kaifu, H. Ishikawa, T. Egawa, T. Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High performance AIGaN/GaN high electron mobility transistors with recessed gate have been successfully fabricated on sapphire substrate. The HEMT with 0.5 urn gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 x 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.2lum gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9780878498949
Publication statusPublished - 2002 Jan 1
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: 2001 Oct 282001 Nov 2

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001


  • AIGaN
  • GaN
  • HEMT
  • High frequency
  • Microwave
  • Recessed gate
  • Sapphire

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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